J. Semicond. > Volume 34 > Issue 11 > Article Number: 114004

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Guodong Gu , Shaobo Dun , Yuanjie Lü , Tingting Han , Peng Xu , Jiayun Yin and Zhihong Feng ,

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Abstract: AlN/GaN high-electron-mobility transistors (HEMTs) on SiC substrates were fabricated by metal-organic chemical vapor deposition (MOCVD) and then characterized. An Si/Ti/Al/Ni/Au stack was used to reduce ohmic contact resistance (0.33 Ω· mm) at a low annealing temperature. The fabricated devices exhibited a maximum drain current density of 1.07 A/mm (VGS=1 V) and a maximum peak extrinsic transconductance of 340 mS/mm. The off-state breakdown voltage of the device was 64 V with a gate-drain distance of 1.9 μm. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 36 and 80 GHz with a 0.25 μm gate length, respectively.

Key words: AlN/GaN HEMTohmic contactSiC substrateMOCVD

Abstract: AlN/GaN high-electron-mobility transistors (HEMTs) on SiC substrates were fabricated by metal-organic chemical vapor deposition (MOCVD) and then characterized. An Si/Ti/Al/Ni/Au stack was used to reduce ohmic contact resistance (0.33 Ω· mm) at a low annealing temperature. The fabricated devices exhibited a maximum drain current density of 1.07 A/mm (VGS=1 V) and a maximum peak extrinsic transconductance of 340 mS/mm. The off-state breakdown voltage of the device was 64 V with a gate-drain distance of 1.9 μm. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 36 and 80 GHz with a 0.25 μm gate length, respectively.

Key words: AlN/GaN HEMTohmic contactSiC substrateMOCVD



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[1]

Micovic M, Kurdoghlian A, Hashimoto P. GaN HFET for W-band power applications[J]. IEDM Tech Dig, 2006: 1.

[2]

De Jaeger J C, Delage S L, Dambrine G. Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates:application to X-band low noise amplifiers[J]. European Gallium Arsenide and Other Semiconductor Application Symposium, EGAAS, 2005: 229.

[3]

Dabiran A M, Wowchak A M, Osinsky A. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures[J]. Appl Phys Lett, 2008, 93(8): 082111. doi: 10.1063/1.2970991

[4]

Xing H G, Deen D, Cao Y. PMBE-grown ultra-shallow AlN/GaN HFET technology[J]. ECS Trans, 2007, 11(5): 233.

[5]

Cao Y, Jena D. High-mobility window for two-dimensional electron gases at ultrathin AlN/GaN heterojunctions[J]. Appl Phys Lett, 2007, 90(18): 182112. doi: 10.1063/1.2736207

[6]

Shinohara K, Regan D, Corrion A. Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cut-off frequency[J]. IEDM Tech Dig, 2011: 457.

[7]

Shinohara K, Regan D, Corrion A. Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG[J]. IEDM Tech Dig, 2012: 617.

[8]

Medjdoub F, Zegaoui M, Waldhoff N. Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high-electron mobility transistors grown on silicon[J]. Appl Phys Exp, 2011, 4(6): 064106. doi: 10.1143/APEX.4.064106

[9]

Corrion A L, Shinohara K, Regan D. High-speed AlN/GaN MOS-HFETs with scaled ALD Al2O3 gate insulators[J]. IEEE Electron Device Lett, 2011, 32(8): 1062. doi: 10.1109/LED.2011.2155616

[10]

Chabak K D, Walker D E, Johnson M R. High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator[J]. IEEE Electron Device Lett, 2011, 32(11): 1677.

[11]

Kim D W, Baik H K. Current conduction mechanism of Si/Ti-based ohmic contacts to n-GaN[J]. Appl Phys Lett, 2000, 77(7): 1011. doi: 10.1063/1.1289057

[12]

Lin C F, Cheng H C, Chi G C. Improved contact performance of GaN film using Si diffusion[J]. Appl Phys Lett, 2000, 76(14): 1878. doi: 10.1063/1.126198

[13]

Mohammed F M, Wang L, Adesidaa I. First-layer Si metallizations for thermally stable and smooth ohmic contacts for AlGaN/GaN high electron mobility transistors[J]. J Vac Sci Technol B, 2007, 25(2): 324. doi: 10.1116/1.2437161

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G D Gu, S B Dun, Y Lü, T T Han, P Xu, J Y Yin, Z H Feng. Low ohmic contact AlN/GaN HEMTs grown by MOCVD[J]. J. Semicond., 2013, 34(11): 114004. doi: 10.1088/1674-4926/34/11/114004.

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Manuscript received: 29 March 2013 Manuscript revised: 23 April 2013 Online: Published: 01 November 2013

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