J. Semicond. > Volume 34 > Issue 3 > Article Number: 034005

A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors

Shuai Wang , Ke Li , Yibo Jiang , Mifang Cong , Huan Du and Zhengsheng Han ,

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Abstract: The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line (TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density. From the results, it is seen that the presented TRL calibration algorithm works well.

Key words: thru-reflect-linelateral double-diffused MOSFETlow impedance test fixtureimpedanceoutput power

Abstract: The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line (TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density. From the results, it is seen that the presented TRL calibration algorithm works well.

Key words: thru-reflect-linelateral double-diffused MOSFETlow impedance test fixtureimpedanceoutput power



References:

[1]

Ma R, Han G, Chen X. Calibrating an arbitrary test fixture for a symmetric device by three measurements[J]. IEEE Trans Instrumentation Measurement, 2010, 59(1): 145. doi: 10.1109/TIM.2009.2022111

[2]

Engen G F, Hoer C A. Thru-reflect-line:an improved technique for calibrating the dual six-port automatic network analyzer[J]. IEEE Trans Microw Theory Tech, 1979, 27(12): 987. doi: 10.1109/TMTT.1979.1129778

[3]

Ludwig R, Bretchko P. RF circuit design:theory and applications[J]. Upper Saddle River:Prentice-Hall, 2000.

[4]

Aaen P, Pla J, Bridges D. A wideband method for the rigorous low-impedance loadpull measurement of high-power transistors suitable for large-signal model validation[J]. ARFTG Conference Digest-Fall, 2000, 38: 1.

[5]

Bouny J J. Impedance measurements for high power RF transistors using the TRL method[J]. Microwave Journal, 1999, 42(10): 126.

[6]

Aboush Z, Jones C, Knight G. High power active harmonic load-pull system for characterization of high power 100-watt transistors[J]. Microwave Conference, 2005, 1: 4.

[7]

Pozar D M. Microwave engineering. 3rd ed. New York: John Wiley & Sons, 2005

[8]

Klopfenstein R W. A transmission line taper of improved design[J]. Proc IRE, 1956, 44(1): 31. doi: 10.1109/JRPROC.1956.274847

[9]

Shih C. Advanced TRL (through-reflect-line) fixture design and error analyses for RF high power transistor characterization and automatic load pull measurement[J]. ARFTG Conference Digest-Spring, 1998, 33: 72.

[1]

Ma R, Han G, Chen X. Calibrating an arbitrary test fixture for a symmetric device by three measurements[J]. IEEE Trans Instrumentation Measurement, 2010, 59(1): 145. doi: 10.1109/TIM.2009.2022111

[2]

Engen G F, Hoer C A. Thru-reflect-line:an improved technique for calibrating the dual six-port automatic network analyzer[J]. IEEE Trans Microw Theory Tech, 1979, 27(12): 987. doi: 10.1109/TMTT.1979.1129778

[3]

Ludwig R, Bretchko P. RF circuit design:theory and applications[J]. Upper Saddle River:Prentice-Hall, 2000.

[4]

Aaen P, Pla J, Bridges D. A wideband method for the rigorous low-impedance loadpull measurement of high-power transistors suitable for large-signal model validation[J]. ARFTG Conference Digest-Fall, 2000, 38: 1.

[5]

Bouny J J. Impedance measurements for high power RF transistors using the TRL method[J]. Microwave Journal, 1999, 42(10): 126.

[6]

Aboush Z, Jones C, Knight G. High power active harmonic load-pull system for characterization of high power 100-watt transistors[J]. Microwave Conference, 2005, 1: 4.

[7]

Pozar D M. Microwave engineering. 3rd ed. New York: John Wiley & Sons, 2005

[8]

Klopfenstein R W. A transmission line taper of improved design[J]. Proc IRE, 1956, 44(1): 31. doi: 10.1109/JRPROC.1956.274847

[9]

Shih C. Advanced TRL (through-reflect-line) fixture design and error analyses for RF high power transistor characterization and automatic load pull measurement[J]. ARFTG Conference Digest-Spring, 1998, 33: 72.

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S Wang, K Li, Y B Jiang, M F Cong, H Du, Z S Han. A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors[J]. J. Semicond., 2013, 34(3): 034005. doi: 10.1088/1674-4926/34/3/034005.

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Manuscript received: 20 August 2012 Manuscript revised: 14 September 2012 Online: Published: 01 March 2013

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