A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors

Abstract: The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line (TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density. From the results, it is seen that the presented TRL calibration algorithm works well.

Key words: thru-reflect-line, lateral double-diffused MOSFET, low impedance test fixture, impedance, output power

References:

[1]	Ma R, Han G, Chen X. Calibrating an arbitrary test fixture for a symmetric device by three measurements[J]. IEEE Trans Instrumentation Measurement, 2010, 59(1): 145. doi: 10.1109/TIM.2009.2022111
[2]	Engen G F, Hoer C A. Thru-reflect-line:an improved technique for calibrating the dual six-port automatic network analyzer[J]. IEEE Trans Microw Theory Tech, 1979, 27(12): 987. doi: 10.1109/TMTT.1979.1129778
[3]	Ludwig R, Bretchko P. RF circuit design:theory and applications[J]. Upper Saddle River:Prentice-Hall, 2000.
[4]	Aaen P, Pla J, Bridges D. A wideband method for the rigorous low-impedance loadpull measurement of high-power transistors suitable for large-signal model validation[J]. ARFTG Conference Digest-Fall, 2000, 38: 1.
[5]	Bouny J J. Impedance measurements for high power RF transistors using the TRL method[J]. Microwave Journal, 1999, 42(10): 126.
[6]	Aboush Z, Jones C, Knight G. High power active harmonic load-pull system for characterization of high power 100-watt transistors[J]. Microwave Conference, 2005, 1: 4.
[7]	Pozar D M. Microwave engineering. 3rd ed. New York: John Wiley & Sons, 2005
[8]	Klopfenstein R W. A transmission line taper of improved design[J]. Proc IRE, 1956, 44(1): 31. doi: 10.1109/JRPROC.1956.274847
[9]	Shih C. Advanced TRL (through-reflect-line) fixture design and error analyses for RF high power transistor characterization and automatic load pull measurement[J]. ARFTG Conference Digest-Spring, 1998, 33: 72.

[1]	Ma R, Han G, Chen X. Calibrating an arbitrary test fixture for a symmetric device by three measurements[J]. IEEE Trans Instrumentation Measurement, 2010, 59(1): 145. doi: 10.1109/TIM.2009.2022111
[2]	Engen G F, Hoer C A. Thru-reflect-line:an improved technique for calibrating the dual six-port automatic network analyzer[J]. IEEE Trans Microw Theory Tech, 1979, 27(12): 987. doi: 10.1109/TMTT.1979.1129778
[3]	Ludwig R, Bretchko P. RF circuit design:theory and applications[J]. Upper Saddle River:Prentice-Hall, 2000.
[4]	Aaen P, Pla J, Bridges D. A wideband method for the rigorous low-impedance loadpull measurement of high-power transistors suitable for large-signal model validation[J]. ARFTG Conference Digest-Fall, 2000, 38: 1.
[5]	Bouny J J. Impedance measurements for high power RF transistors using the TRL method[J]. Microwave Journal, 1999, 42(10): 126.
[6]	Aboush Z, Jones C, Knight G. High power active harmonic load-pull system for characterization of high power 100-watt transistors[J]. Microwave Conference, 2005, 1: 4.
[7]	Pozar D M. Microwave engineering. 3rd ed. New York: John Wiley & Sons, 2005
[8]	Klopfenstein R W. A transmission line taper of improved design[J]. Proc IRE, 1956, 44(1): 31. doi: 10.1109/JRPROC.1956.274847
[9]	Shih C. Advanced TRL (through-reflect-line) fixture design and error analyses for RF high power transistor characterization and automatic load pull measurement[J]. ARFTG Conference Digest-Spring, 1998, 33: 72.

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S Wang, K Li, Y B Jiang, M F Cong, H Du, Z S Han. A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors[J]. J. Semicond., 2013, 34(3): 034005. doi: 10.1088/1674-4926/34/3/034005.

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