Fig. 1.
Test fixture model.
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| Citation: |
Shuai Wang, Ke Li, Yibo Jiang, Mifang Cong, Huan Du, Zhengsheng Han. A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors[J]. Journal of Semiconductors, 2013, 34(3): 034005. doi: 10.1088/1674-4926/34/3/034005
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S Wang, K Li, Y B Jiang, M F Cong, H Du, Z S Han. A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors[J]. J. Semicond., 2013, 34(3): 034005. doi: 10.1088/1674-4926/34/3/034005.
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A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors
DOI: 10.1088/1674-4926/34/3/034005
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Abstract
The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line (TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density. From the results, it is seen that the presented TRL calibration algorithm works well. -
References
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