J. Semicond. > Volume 34 > Issue 6 > Article Number: 062003

The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells

Xiaosheng Qu , Sisi Zhang , , Hongyin Bao and Liling Xiong

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Abstract: A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model. The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied. This shows that the maximum efficiency, as a function of quantum-dot size and distance, is about 60.15% under the maximum concentration for only one InAs/GaAs subcell, and is even up to 39.69% for the overall cell. In addition, other efficiency factors such as current mismatch, the formation of a quasicontinuum conduction band and concentrated light are examined.

Key words: multi-junction solar cellKronig-Penney modelquantum dotintermediate bandhigh efficiency

Abstract: A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model. The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied. This shows that the maximum efficiency, as a function of quantum-dot size and distance, is about 60.15% under the maximum concentration for only one InAs/GaAs subcell, and is even up to 39.69% for the overall cell. In addition, other efficiency factors such as current mismatch, the formation of a quasicontinuum conduction band and concentrated light are examined.

Key words: multi-junction solar cellKronig-Penney modelquantum dotintermediate bandhigh efficiency



References:

[1]

Linares P G, Martí A, Antolín E. Ⅲ-Ⅴ compound semiconductor screening for implementing quantum dot intermediate band solar cells[J]. J Appl Phys, 2011, 109(1): 014313. doi: 10.1063/1.3527912

[2]

Martí A, López N, Antolín E. Novel semiconductor solar cell structures:the quantum dot intermediateband solar cell[J]. Thin Solid Films, 2006, 511: 638.

[3]

Luque A, Martí A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels[J]. Phys Rev Lett, 1997, 78(26): 5014. doi: 10.1103/PhysRevLett.78.5014

[4]

Mehdipour A, Ogawa M, Souma S. Tight binding modeling of intermediate band solar cells based on InAs/GaAs quantum dot arrays[J]. International Meeting for Future of Electron Devices, 2011: 36.

[5]

Ojajärvi J, Räsänen E, Sadewasser S. Tetrahedral chalcopyrite quantum dots for solar-cell applications[J]. Appl Phys Lett, 2011, 99(11): 111907. doi: 10.1063/1.3640225

[6]

Guter W, Schone J, Philipps S P. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight[J]. Appl Phys Lett, 2009, 94(22): 223504. doi: 10.1063/1.3148341

[7]

Roosbroeck W, Shockley W. Photon-radiative recombination of electrons and holes in germanium[J]. Phys Rev Lett, 1954, 94: 1558.

[8]

Lazarenkova O L, Balandin A A. Miniband formation in a quantum dot crystal[J]. J Appl Phys, 2001, 89(10): 5509. doi: 10.1063/1.1366662

[9]

Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys[J]. J Appl Phys, 2001, 89(11): 5815. doi: 10.1063/1.1368156

[10]

Shao Q, Balandin A A, Fedoseyev A I. Intermediate-band solar cells based on quantum dot supracrystals[J]. Appl Phys Lett, 2007, 91(16): 163503. doi: 10.1063/1.2799172

[11]

Van Vechten J A, Bergstresser T K. Electronic structures of semiconductor alloys[J]. Phys Rev B, 1970, 1: 3351. doi: 10.1103/PhysRevB.1.3351

[12]

Luque A, Martí A, López N. Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells[J]. App Phys Lett, 2005, 87(8): 083505. doi: 10.1063/1.2034090

[13]

Martí A, Cuadra L, Luque A. Partial filling of a quantum dot intermediate band for solar cells[J]. IEEE Trans Electron Devices, 2001: 2394.

[14]

Cuadra L, Martí L, Luque A. Quantum dot intermediate band solar cell[J]. Conference Record of the 28th IEEE Photovoltaic Specialists Conference, 2000: 940.

[15]

Cui M, Chen N F, Yang X L. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006

[1]

Linares P G, Martí A, Antolín E. Ⅲ-Ⅴ compound semiconductor screening for implementing quantum dot intermediate band solar cells[J]. J Appl Phys, 2011, 109(1): 014313. doi: 10.1063/1.3527912

[2]

Martí A, López N, Antolín E. Novel semiconductor solar cell structures:the quantum dot intermediateband solar cell[J]. Thin Solid Films, 2006, 511: 638.

[3]

Luque A, Martí A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels[J]. Phys Rev Lett, 1997, 78(26): 5014. doi: 10.1103/PhysRevLett.78.5014

[4]

Mehdipour A, Ogawa M, Souma S. Tight binding modeling of intermediate band solar cells based on InAs/GaAs quantum dot arrays[J]. International Meeting for Future of Electron Devices, 2011: 36.

[5]

Ojajärvi J, Räsänen E, Sadewasser S. Tetrahedral chalcopyrite quantum dots for solar-cell applications[J]. Appl Phys Lett, 2011, 99(11): 111907. doi: 10.1063/1.3640225

[6]

Guter W, Schone J, Philipps S P. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight[J]. Appl Phys Lett, 2009, 94(22): 223504. doi: 10.1063/1.3148341

[7]

Roosbroeck W, Shockley W. Photon-radiative recombination of electrons and holes in germanium[J]. Phys Rev Lett, 1954, 94: 1558.

[8]

Lazarenkova O L, Balandin A A. Miniband formation in a quantum dot crystal[J]. J Appl Phys, 2001, 89(10): 5509. doi: 10.1063/1.1366662

[9]

Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys[J]. J Appl Phys, 2001, 89(11): 5815. doi: 10.1063/1.1368156

[10]

Shao Q, Balandin A A, Fedoseyev A I. Intermediate-band solar cells based on quantum dot supracrystals[J]. Appl Phys Lett, 2007, 91(16): 163503. doi: 10.1063/1.2799172

[11]

Van Vechten J A, Bergstresser T K. Electronic structures of semiconductor alloys[J]. Phys Rev B, 1970, 1: 3351. doi: 10.1103/PhysRevB.1.3351

[12]

Luque A, Martí A, López N. Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells[J]. App Phys Lett, 2005, 87(8): 083505. doi: 10.1063/1.2034090

[13]

Martí A, Cuadra L, Luque A. Partial filling of a quantum dot intermediate band for solar cells[J]. IEEE Trans Electron Devices, 2001: 2394.

[14]

Cuadra L, Martí L, Luque A. Quantum dot intermediate band solar cell[J]. Conference Record of the 28th IEEE Photovoltaic Specialists Conference, 2000: 940.

[15]

Cui M, Chen N F, Yang X L. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006

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X S Qu, S S Zhang, H Y Bao, L L Xiong. The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells[J]. J. Semicond., 2013, 34(6): 062003. doi: 10.1088/1674-4926/34/6/062003.

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History

Manuscript received: 08 October 2012 Manuscript revised: 22 January 2013 Online: Published: 01 June 2013

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