J. Semicond. > Volume 34 > Issue 7 > Article Number: 073002

Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique

Abdelouahab Gahtar 1, , Said Benramache 1, 2, , , Boubaker Benhaoua 1, and Foued Chabane 3,

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Abstract: Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350℃. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G=32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm)-1. So the best results are achieved in Al doped ZnO film with 3 wt%.

Key words: ZnO:Althin filmsTCOultrasonic spray technique

Abstract: Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350℃. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G=32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm)-1. So the best results are achieved in Al doped ZnO film with 3 wt%.

Key words: ZnO:Althin filmsTCOultrasonic spray technique



References:

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Zuo C, Wen J, Zhong C. First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO[J]. Journal of Semiconductors, 2012, 33(7): 072001. doi: 10.1088/1674-4926/33/7/072001

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Ye Z, Yuan G, Li B. Fabrication and characteristics of ZnO thin films with Al/Si (100) substrates[J]. Mater Chem Phys, 2005, 93(2): 170.

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Zhang H, Yang S, Liu H. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering[J]. Journal of Semiconductors, 2011, 32(4): 043002. doi: 10.1088/1674-4926/32/4/043002

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Rozati S M, Akesteh S. Characterization of ZnO:Al thin films obtained by spray pyrolysis technique[J]. Materials Characterization, 2007, 58(4): 319. doi: 10.1016/j.matchar.2006.05.012

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Ma Q B, Ye Z Z, He H P. Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering[J]. Materials Characterization, 2008, 59(2): 124. doi: 10.1016/j.matchar.2006.11.020

[13]

Benramache S, Benhaoua B, Chabane F. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films[J]. Journal of Semiconductors, 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001

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Benramache S, Benhaoua B, Chabane F. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001

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Benramache S, Benhaoua B. Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by ultrasonic spray technique[J]. Superlattices and Microstructures, 2012, 52(4): 807. doi: 10.1016/j.spmi.2012.06.005

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Benramache S, Benhaoua B. Influence of annealing temperature on structural and optical properties of ZnO:In thin films prepared by ultrasonic spray technique[J]. Superlattices and Microstructures, 2012, 52(6): 1062. doi: 10.1016/j.spmi.2012.08.006

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Romero R, Ibanez R L, Dalchiele E A. Compositional and physico-optical characterization of 0-5% Al-doped zinc oxide films prepared by chemical spray pyrolysis[J]. J Phys D:Appl Phys, 2010, 43(9): 095303. doi: 10.1088/0022-3727/43/9/095303

[23]

Mekhnache M, Drici A, Hamideche L S. Properties of ZnO thin films deposited on (glass, ITO and ZnO:Al) substrates[J]. Superlattices and Microstructures, 2011, 49(3): 510.

[24]

Mosbah A, Aida M S. Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films[J]. Journal of Alloys and Compounds, 2012, 515(1): 149.

[25]

Rahmane S, Djouadi M A, Aida M S. Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties[J]. Thin Solid Films, 2010, 519(1): 5. doi: 10.1016/j.tsf.2010.06.063

[26]

Zhang C. High-quality oriented ZnO films grown by sol-gel process assisted with ZnO[J]. Journal of Physics and Chemistry of Solids, 2010, 71(2): 364.

[1]

Zhang Y, Wu C, Zheng Y. Synthesis and efficient field emission characteristics of patterned ZnO nanowires[J]. Journal of Semiconductors, 2012, 33(2): 023001. doi: 10.1088/1674-4926/33/2/023001

[2]

Zhu X, Wu H, Wang S. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. Journal of Semiconductors, 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001

[3]

Zhang H, Liu H, Lei C. Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films[J]. Journal of Semiconductors, 2010, 31(8): 083005. doi: 10.1088/1674-4926/31/8/083005

[4]

Ji Z, Mao Q, Ke W. Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering[J]. Solid State Commun, 2010, 150(8): 1919.

[5]

Zuo C, Wen J, Zhong C. First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO[J]. Journal of Semiconductors, 2012, 33(7): 072001. doi: 10.1088/1674-4926/33/7/072001

[6]

Kumar P S, Raj A D, Mangalaraj D. Growth of hierarchical based ZnO micro/nanostructured films and their tunable wettability behavior[J]. Appl Surf Sci, 2011, 257(20): 6678.

[7]

Ye Z, Yuan G, Li B. Fabrication and characteristics of ZnO thin films with Al/Si (100) substrates[J]. Mater Chem Phys, 2005, 93(2): 170.

[8]

Zhang H, Yang S, Liu H. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering[J]. Journal of Semiconductors, 2011, 32(4): 043002. doi: 10.1088/1674-4926/32/4/043002

[9]

El Manouni A, Manjon F J, Perales M. Effect of thermal annealing on ZnO:Al thin films grown by spray pyrolysis[J]. Superlattices and Microstructures, 2007, 42(2): 134.

[10]

Rozati S M, Akesteh S. Characterization of ZnO:Al thin films obtained by spray pyrolysis technique[J]. Materials Characterization, 2007, 58(4): 319. doi: 10.1016/j.matchar.2006.05.012

[11]

Saleem M, Siddiqi S A, Atiq S. Carriers-mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors[J]. Materials Characterization, 2011, 62(12): 1102.

[12]

Ma Q B, Ye Z Z, He H P. Preparation and characterization of transparent conductive ZnO:Ga films by DC reactive magnetron sputtering[J]. Materials Characterization, 2008, 59(2): 124. doi: 10.1016/j.matchar.2006.11.020

[13]

Benramache S, Benhaoua B, Chabane F. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films[J]. Journal of Semiconductors, 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001

[14]

Duclére J R, Novotny M, Meaney A. Properties of Li-, P-and N-doped ZnO thin films prepared by pulsed laser deposition[J]. Superlattices and Microstructures, 2005, 38(3): 397.

[15]

Hafdallah A, Yanineb F, Aida M S. In doped ZnO thin films[J]. Journal of Alloys and Compounds, 2011, 509(18): 7267.

[16]

Benramache S, Benhaoua B, Chabane F. Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films[J]. Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001

[17]

Venkatachalam S, Iida Y, Kanno Y. Preparation and characterization of Al doped ZnO thin films by PLD[J]. Superlattices and Microstructures, 2008, 44(2): 127.

[18]

Zhu H, Hüpkes J, Bunte E. Reactive sputtering of ZnO:Al thin films from rotatable dual metallic targets[J]. Appl Surf Sci, 2012, 259(4): 582.

[19]

Zhu H, Hüpkes J, Bunte E. Study of ZnO:Al films for silicon thin film solar cells[J]. Appl Surf Sci, 2012, 261: 268. doi: 10.1016/j.apsusc.2012.07.159

[20]

Benramache S, Benhaoua B. Influence of substrate temperature and Cobalt concentration on structural and optical properties of ZnO thin films prepared by ultrasonic spray technique[J]. Superlattices and Microstructures, 2012, 52(4): 807. doi: 10.1016/j.spmi.2012.06.005

[21]

Benramache S, Benhaoua B. Influence of annealing temperature on structural and optical properties of ZnO:In thin films prepared by ultrasonic spray technique[J]. Superlattices and Microstructures, 2012, 52(6): 1062. doi: 10.1016/j.spmi.2012.08.006

[22]

Romero R, Ibanez R L, Dalchiele E A. Compositional and physico-optical characterization of 0-5% Al-doped zinc oxide films prepared by chemical spray pyrolysis[J]. J Phys D:Appl Phys, 2010, 43(9): 095303. doi: 10.1088/0022-3727/43/9/095303

[23]

Mekhnache M, Drici A, Hamideche L S. Properties of ZnO thin films deposited on (glass, ITO and ZnO:Al) substrates[J]. Superlattices and Microstructures, 2011, 49(3): 510.

[24]

Mosbah A, Aida M S. Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films[J]. Journal of Alloys and Compounds, 2012, 515(1): 149.

[25]

Rahmane S, Djouadi M A, Aida M S. Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties[J]. Thin Solid Films, 2010, 519(1): 5. doi: 10.1016/j.tsf.2010.06.063

[26]

Zhang C. High-quality oriented ZnO films grown by sol-gel process assisted with ZnO[J]. Journal of Physics and Chemistry of Solids, 2010, 71(2): 364.

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A Gahtar, S Benramache, B Benhaoua, F Chabane. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique[J]. J. Semicond., 2013, 34(7): 073002. doi: 10.1088/1674-4926/34/7/073002.

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Manuscript received: 10 October 2012 Manuscript revised: 24 February 2013 Online: Published: 01 July 2013

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