J. Semicond. > Volume 34 > Issue 7 > Article Number: 074010

A low power discrete operation mode for punchthrough phototransistor

Quan Zhou , Shuxu Guo , Jingyi Song , Zhaohan Li , Guotong Du and Yuchun Chang ,

+ Author Affilications + Find other works by these authors

PDF

Abstract: This paper proposed a discrete operation mode for a punchthrough (PT) phototransistor, which is suitable for low power application, since the bias current is only necessary during the read-out phase. Moreover, simulation results show that with the new operation mode, the photocurrent is much larger than that of continuous operation mode. An ultra-high responsivity of 2×107A/W at 10-9 W/cm2 is obtained with a small detector size of 1 μm2. In CMOS image sensor applications, with an integration time of 10 ms, a normalized pixel responsivity of 220 V·m2/W·s·μm2 is obtained without any auxiliary amplifier.

Key words: punchthrough (PT) phototransistordiscrete operation modelow powerhigh responsivity

Abstract: This paper proposed a discrete operation mode for a punchthrough (PT) phototransistor, which is suitable for low power application, since the bias current is only necessary during the read-out phase. Moreover, simulation results show that with the new operation mode, the photocurrent is much larger than that of continuous operation mode. An ultra-high responsivity of 2×107A/W at 10-9 W/cm2 is obtained with a small detector size of 1 μm2. In CMOS image sensor applications, with an integration time of 10 ms, a normalized pixel responsivity of 220 V·m2/W·s·μm2 is obtained without any auxiliary amplifier.

Key words: punchthrough (PT) phototransistordiscrete operation modelow powerhigh responsivity



References:

[1]

Han Z T, Chu J K, Meng F T. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator[J]. Journal of Semiconductors, 2009, 30(10): 104008. doi: 10.1088/1674-4926/30/10/104008

[2]

Zhang Y X, Liao Z Y, Zhao L J. A high-efficiency high-power evanescently coupled UTC-photodiode[J]. Journal of Semiconductors, 2009, 30(4): 044008. doi: 10.1088/1674-4926/30/4/044008

[3]

Chen B, Yang Y T, Chai C C. Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes[J]. Journal of Semiconductors, 2009, 30(4): 054010.

[4]

Abedin M N, Refaat T F, Suliima O V. AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range[J]. IEEE Trans Electron Devices, 2004, 51(12): 2013. doi: 10.1109/TED.2004.838328

[5]

Han D, Li G, Zhang Y. Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor[J]. IEEE Photonics Technol Lett, 1997, 9(10): 1391. doi: 10.1109/68.623273

[6]

Luo H, Chang Y, Wang Y. Ultrasensitive Si phototransistors with a punchthrough base[J]. Appl Phys Lett, 2001, 79(6): 773. doi: 10.1063/1.1390477

[7]

Liu X, Guo S, Chang Y. Punchthrough enhanced phototransistor fabricated in standard CMOS process[J]. IEEE Electron Device Lett, 2009, 30(3): 272. doi: 10.1109/LED.2008.2011143

[8]

Zhou Q, Guo S, Chang Y. High-dynamic-range photodetecting scheme based on PEPT with a large output swing[J]. IEEE Trans Electron Devices, 2012, 59(5): 1423. doi: 10.1109/TED.2012.2187658

[9]

Papadopoulou P, Georgoulas N, Thanailakis A. An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental results[J]. Thin Solid Films, 2002, 415(1): 276.

[10]

Chen C Y. Theory of a modulated barrier photodiode[J]. Appl Phys Lett, 1981, 39(12): 15.

[11]

http://www.datasheetcatalog.org/datasheet2/2/044ipph9289eg3l6qa3eadzds1fy.pdf. 1. 3 MPxl Rolling Shutter CMOS Image Sensor

[12]

Cremers B, Agarwa M. A high speed pipelined snapshot CMOS image sensor with 6.4 Gpixel/s data rate[J]. International Image Sensor Workshop, 2009.

[1]

Han Z T, Chu J K, Meng F T. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator[J]. Journal of Semiconductors, 2009, 30(10): 104008. doi: 10.1088/1674-4926/30/10/104008

[2]

Zhang Y X, Liao Z Y, Zhao L J. A high-efficiency high-power evanescently coupled UTC-photodiode[J]. Journal of Semiconductors, 2009, 30(4): 044008. doi: 10.1088/1674-4926/30/4/044008

[3]

Chen B, Yang Y T, Chai C C. Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes[J]. Journal of Semiconductors, 2009, 30(4): 054010.

[4]

Abedin M N, Refaat T F, Suliima O V. AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range[J]. IEEE Trans Electron Devices, 2004, 51(12): 2013. doi: 10.1109/TED.2004.838328

[5]

Han D, Li G, Zhang Y. Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor[J]. IEEE Photonics Technol Lett, 1997, 9(10): 1391. doi: 10.1109/68.623273

[6]

Luo H, Chang Y, Wang Y. Ultrasensitive Si phototransistors with a punchthrough base[J]. Appl Phys Lett, 2001, 79(6): 773. doi: 10.1063/1.1390477

[7]

Liu X, Guo S, Chang Y. Punchthrough enhanced phototransistor fabricated in standard CMOS process[J]. IEEE Electron Device Lett, 2009, 30(3): 272. doi: 10.1109/LED.2008.2011143

[8]

Zhou Q, Guo S, Chang Y. High-dynamic-range photodetecting scheme based on PEPT with a large output swing[J]. IEEE Trans Electron Devices, 2012, 59(5): 1423. doi: 10.1109/TED.2012.2187658

[9]

Papadopoulou P, Georgoulas N, Thanailakis A. An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental results[J]. Thin Solid Films, 2002, 415(1): 276.

[10]

Chen C Y. Theory of a modulated barrier photodiode[J]. Appl Phys Lett, 1981, 39(12): 15.

[11]

http://www.datasheetcatalog.org/datasheet2/2/044ipph9289eg3l6qa3eadzds1fy.pdf. 1. 3 MPxl Rolling Shutter CMOS Image Sensor

[12]

Cremers B, Agarwa M. A high speed pipelined snapshot CMOS image sensor with 6.4 Gpixel/s data rate[J]. International Image Sensor Workshop, 2009.

[1]

Chen Shuai, Li Hao, Shi Xiaobing, Yang Liqiong, Yang Zongren, Zhong Shiqiang, Huang Lingyi. A low-power high-swing voltage-mode transmitter. J. Semicond., 2012, 33(4): 045003. doi: 10.1088/1674-4926/33/4/045003

[2]

Ying Jianhua, Chen Jia, Wang Jie. Design of Low Power,High PSRR Voltage Reference. J. Semicond., 2007, 28(6): 975.

[3]

Ma Shaoyu, Han Yan, Huang Xiaowei, Yang Liwu. A High-Performance,Low-Power ΣΔ Modulator for Digital Audio Applications. J. Semicond., 2008, 29(10): 2050.

[4]

Shubin Liu, Zhangming Zhu, Yintang Yang, Lianxi Liu. A high speed low power low offset dynamic comparator used in SHA-less pipelined ADC. J. Semicond., 2014, 35(5): 055008. doi: 10.1088/1674-4926/35/5/055008

[5]

Dong Qiao, Geng Li, Shao Zhibiao. A Low-Voltage,Low-Power CMOS High Dynamic Range dB-Linear VGA for Super Heterodyne Receivers. J. Semicond., 2007, 28(11): 1690.

[6]

Junsheng Lü, Hao Ju, Mao Ye, Feng Zhang, Jianzhong Zhao, Yumei Zhou. A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links. J. Semicond., 2013, 34(7): 075002. doi: 10.1088/1674-4926/34/7/075002

[7]

Yuan Quan, Yang Haigang, Dong Fangyuan, Zhong Lungui. A "Time Reuse" Technique for Design of a Low-Power,High-Speed Multi-Modulus Divider in a Frequency Synthesizer. J. Semicond., 2008, 29(4): 794.

[8]

Zhang Xiaoyang, Jia Song, Wang Yuan, Zhang Ganggang. Design of Low Power and High Performance Explicit-Pulsed Flip-Flops. J. Semicond., 2008, 29(10): 2064.

[9]

Tian Wang, Xiaoxin Cui, Yewen Ni, Kai Liao, Nan Liao, Dunshan Yu, Xiaole Cui. Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique. J. Semicond., 2017, 38(4): 044005. doi: 10.1088/1674-4926/38/4/044005

[10]

Chengying Chen, Hainan Liu, Yong Hei, Jun Fan, Xiaoyu Hu. A low-power high-performance configurable auto-gain control loop for a digital hearing aid SoC. J. Semicond., 2013, 34(10): 105011. doi: 10.1088/1674-4926/34/10/105011

[11]

Zhu Minghao, Zhu Congyi, Li Wenjiang, Zhang Yaohui. A low-power high-speed driving circuit for spatial light modulators. J. Semicond., 2012, 33(2): 025013. doi: 10.1088/1674-4926/33/2/025013

[12]

Cong Gaojian, Qi Jiayue. Design of a High-Speed Low-Power 9-Port Register File. J. Semicond., 2007, 28(4): 614.

[13]

Binbin Wei, Jinguang Jiang. A low power high gain gain-controlled LNA + mixer for GNSS receivers. J. Semicond., 2013, 34(11): 115002. doi: 10.1088/1674-4926/34/11/115002

[14]

Pranav Kumar Asthana. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply. J. Semicond., 2015, 36(2): 024003. doi: 10.1088/1674-4926/36/2/024003

[15]

Weihao Liu, Lu Huang. A low power CMOS VCO using inductive-biasing with high performance FoM. J. Semicond., 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001

[16]

Zhang Feng, Feng Wei, Cui Hao, Yang Yi, Huang Lingyi, Hu Weiwu. A 0.18μm Transmitter and Receiver with High Speed and Low Power. J. Semicond., 2008, 29(5): 836.

[17]

Wang Xiaoxia, Wang Zhigong. High performance power-configurable preamplifier in a high-density parallel optical receiver. J. Semicond., 2012, 33(1): 015004. doi: 10.1088/1674-4926/33/1/015004

[18]

Sun Yehui, Jiang Lixin, Qin Shicai. A Low Voltage Low Power CMOS 5Gb/s Transceiver. J. Semicond., 2007, 28(8): 1283.

[19]

Chenjian Wu, Zhiqun Li, Ge Sun. A low voltage low power up-conversion mixer for WSN application. J. Semicond., 2014, 35(4): 045006. doi: 10.1088/1674-4926/35/4/045006

[20]

Weiyang Liu, Jingjing Chen, Haiyong Wang, Nanjian Wu. A low power 2.4 GHz transceiver for ZigBee applications. J. Semicond., 2013, 34(8): 085007. doi: 10.1088/1674-4926/34/8/085007

Search

Advanced Search >>

GET CITATION

Q Zhou, S X Guo, J Y Song, Z H Li, G T Du, Y C Chang. A low power discrete operation mode for punchthrough phototransistor[J]. J. Semicond., 2013, 34(7): 074010. doi: 10.1088/1674-4926/34/7/074010.

Export: BibTex EndNote

Article Metrics

Article views: 607 Times PDF downloads: 8 Times Cited by: 0 Times

History

Manuscript received: 19 November 2012 Manuscript revised: 22 February 2013 Online: Published: 01 July 2013

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误