J. Semicond. > Volume 35 > Issue 12 > Article Number: 125005

Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure

Zhiqun Cheng , , Minshi Jia , Ya Luan and Xinxiang Lian

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Abstract: The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds=28 V, Vgs=-3.5 V at the frequency of 5.5 GHz.

Key words: GaN HEMTmodelingpower amplifierwidebandnegative feedback

Abstract: The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds=28 V, Vgs=-3.5 V at the frequency of 5.5 GHz.

Key words: GaN HEMTmodelingpower amplifierwidebandnegative feedback



References:

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[2]

Pribble W L, Palmour J W, Sheppard S T. Application of SiC MESFETs and GaN HEMTs in power amplifier design[J]. IEEE MTT'S International, 2002, 3: 1819.

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[5]

Kuwata E, Yamanaka K, Kirikoshi T. C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT[J]. Microwave Conference, 2009: 1663.

[6]

Xu J J, Wu Y F, Keller S. 1-8-GHz GaN-based power amplifier using flip-chip bonding[J]. IEEE Microw Guided Wave Lett, 1999, 9(7): 277. doi: 10.1109/75.774146

[7]

Santhakumar R, Thibeault B, Member S. Two-stage high-gain high-power distributed amplifier using dual-gate GaN HEMTs[J]. IEEE Trans Microw Theory Tech, 2011, 59(8): 2059. doi: 10.1109/TMTT.2011.2144996

[8]

Lin Xigui, Hao Yue, Feng Qian. Design of power amplifier based on AlGaN/GaN HEMT[J]. Chinese Journal of Semiconductors, 2006, 31(1): 52.

[9]

Yu Xuming, Zhang Bin, Chen Tangsheng. 6-18 GHz broadband GaN power amplifier MMIC[J]. Research & Progress of Solid-State Electronics, 2011, 31(2): 111.

[10]

Liu D, Wang L, Chen X J. Microwave and Millimeter Wave Circuits and SystemTechnology, International workshop, 2012, 1

[11]

http://www.triquint.com/products/p/TGF2023-02

[12]

Chen Chi, Hao Yue, Yang Ling. Nonlinear characterization of GaN HEMT[J]. J Semicond, 2010, 31(11): 114004. doi: 10.1088/1674-4926/31/11/114004

[13]

Cheng Z Q, Jin L W, Shi W. Design of broadband GaN HEMT power amplifier with Ku band[J]. Appl Mechan Mater, 2012, 263-266: 39. doi: 10.4028/www.scientific.net/AMM.263-266

[1]

Sim J, Lim J, Park M. Analysis and design of wide-band power amplifier using GaN[J]. Microwave Conference, 2009: 2352.

[2]

Pribble W L, Palmour J W, Sheppard S T. Application of SiC MESFETs and GaN HEMTs in power amplifier design[J]. IEEE MTT'S International, 2002, 3: 1819.

[3]

Xue H X, Kenington P B, Beach M A. A high performance ultra-broadband RF choke microwave applications. IEEE Colloquium on Evolving Technologies for Small Earth Station Hardware, 1995

[4]

Ayasli Y, Reynolds L D, Vorhaus J L. Monolithic 2-20 GHz GaAs travelling-wave amplifier[J]. Electron Lett, 1982, 18(14): 596. doi: 10.1049/el:19820409

[5]

Kuwata E, Yamanaka K, Kirikoshi T. C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT[J]. Microwave Conference, 2009: 1663.

[6]

Xu J J, Wu Y F, Keller S. 1-8-GHz GaN-based power amplifier using flip-chip bonding[J]. IEEE Microw Guided Wave Lett, 1999, 9(7): 277. doi: 10.1109/75.774146

[7]

Santhakumar R, Thibeault B, Member S. Two-stage high-gain high-power distributed amplifier using dual-gate GaN HEMTs[J]. IEEE Trans Microw Theory Tech, 2011, 59(8): 2059. doi: 10.1109/TMTT.2011.2144996

[8]

Lin Xigui, Hao Yue, Feng Qian. Design of power amplifier based on AlGaN/GaN HEMT[J]. Chinese Journal of Semiconductors, 2006, 31(1): 52.

[9]

Yu Xuming, Zhang Bin, Chen Tangsheng. 6-18 GHz broadband GaN power amplifier MMIC[J]. Research & Progress of Solid-State Electronics, 2011, 31(2): 111.

[10]

Liu D, Wang L, Chen X J. Microwave and Millimeter Wave Circuits and SystemTechnology, International workshop, 2012, 1

[11]

http://www.triquint.com/products/p/TGF2023-02

[12]

Chen Chi, Hao Yue, Yang Ling. Nonlinear characterization of GaN HEMT[J]. J Semicond, 2010, 31(11): 114004. doi: 10.1088/1674-4926/31/11/114004

[13]

Cheng Z Q, Jin L W, Shi W. Design of broadband GaN HEMT power amplifier with Ku band[J]. Appl Mechan Mater, 2012, 263-266: 39. doi: 10.4028/www.scientific.net/AMM.263-266

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Z Q Cheng, M S Jia, Y Luan, X X Lian. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure[J]. J. Semicond., 2014, 35(12): 125005. doi: 10.1088/1674-4926/35/12/125005.

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Manuscript received: 27 May 2014 Manuscript revised: 03 July 2014 Online: Published: 01 December 2014

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