J. Semicond. > 2015, Volume 36 > Issue 10 > 102006
|

SEMICONDUCTOR PHYSICS

Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics

Hongqi Jing, Li Zhong, Yuxi Ni, Junjie Zhang, Suping Liu and Xiaoyu Ma

+ Author Affiliations

 Corresponding author: Li Zhong, zhongli@semi.ac.cn

DOI: 10.1088/1674-4926/36/10/102006

PDF

Abstract: A novel high-efficiency cooling mini-channel heat-sink structure has been designed to meet the package technology demands of high power density laser diode array stacks.Thermal and water flowing characteristics have been simulated using the Ansys-Fluent software.Owing to the increased effective cooling area, this mini-channel heat-sink structure has a better cooling effect when compared with the traditional macro-channel heat-sinks.Owing to the lower flow velocity in this novel high efficient cooling structure, the chillers' water-pressure requirement is reduced.Meanwhile, the machining process of this high-efficiency cooling mini-channel heat-sink structure is simple and the cost is relatively low, it also has advantages in terms of high durability and long lifetime.This heat-sink is an ideal choice for the package of high power density laser diode array stacks.

Key words: heat-sink, thermal simulation, flow velocity, temperature



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  Schematic diagram of the heat-sink structure models for simulation.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) Temperature distributions of the macro-channel and the mini-channel heat-sink structure at the middle cross-section along water flow direction under the same flow velocity of 0.1 m/s. (a) Maximum temperature of 327.7 K. (b) Maximum temperature of 305.3~K.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Relationship between the maximum temperature and the flow velocity.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Temperature distributions of the mini-channel heat-sink structure. (a) At the cross-section along the water flow direction at the flow velocity of 0.1 m/s. (b) At the middle cross-section of the channels at the flow velocity of 0.1 m/s. (c) At the cross-section along the water flow direction at the flow velocity of 0.07 m/s. (d) At the middle cross-section of the channels at the flow velocity of 0.07 m/s.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Velocity distributions in the mini-channels with the initial flow velocity of 0.07 m/s. (a) The whole cross-section of the velocity distribution. (b) An enlargement of a part of one channel.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Relationship of the thermal resistance and flow velocity.

DownLoad: Full-Size Img PowerPoint

Table 1.   Performance parameters of materials for the simulation models.

Material$\kappa$(W/(m$\cdot$K))$c$ (J/(kg$\cdot$K))$\rho$ (kg/m$^{3})$$\eta$ (Pa$\cdot$s)
Cu3903958900--
GaAs443255330--
BeO26010883030--
H$_{2}$O--420010000.001
DownLoad: CSV

Table 2.   Decreasing rates of the maximum temperature changes.

Velocity (m/s)Decreasing rate [$du$/(0.01 m/s)]
0.07-0.11.07
0.1-0.50.7
0.5-10.38
DownLoad: CSV

Table 3.   Thermal resistances at different flow velocities in the novel mini-channel heat-sink structure.

Flow velocity (m/s) 0.07 0.1 0.5 1.0
Temperature rise ($\du$) 15.5 12.3 8.8 6.9
Maximum thermal resistance ($\du$/W) 0.62 0.492 0.352 0.296
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2860 Times PDF downloads: 38 Times Cited by: 0 Times

    History

    Received: 07 January 2015 Revised: Online: Published: 01 October 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(10): 102006
      Hongqi Jing, Li Zhong, Yuxi Ni, Junjie Zhang, Suping Liu, Xiaoyu Ma. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. Journal of Semiconductors, 2015, 36(10): 102006. doi: 10.1088/1674-4926/36/10/102006 ****H Q Jing, L Zhong, Y X Ni, J J Zhang, S P Liu, X Y Ma. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. J. Semicond., 2015, 36(10): 102006. doi: 10.1088/1674-4926/36/10/102006.
      Citation:
      Hongqi Jing, Li Zhong, Yuxi Ni, Junjie Zhang, Suping Liu, Xiaoyu Ma. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. Journal of Semiconductors, 2015, 36(10): 102006. doi: 10.1088/1674-4926/36/10/102006 ****
      H Q Jing, L Zhong, Y X Ni, J J Zhang, S P Liu, X Y Ma. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J]. J. Semicond., 2015, 36(10): 102006. doi: 10.1088/1674-4926/36/10/102006.
      shu

      Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics

      DOI: 10.1088/1674-4926/36/10/102006

      • National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the Defense Industrial Technology Development Program (No.B1320133033).

      More Information
      • Corresponding author: zhongli@semi.ac.cn
      • Received Date: 2015-01-07
      • Accepted Date: 2015-05-20
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return