J M Lin, G H Zhang, Y H Zheng, S Z Li, Z H Zhang, S D Chen. Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application[J]. J. Semicond., 2015, 36(12): 125002. doi: 10.1088/1674-4926/36/12/125002.
Junming Lin , , Guohao Zhang , Yaohua Zheng , Sizhen Li , Zhihao Zhang and Sidi Chen
Abstract: A broadband class-F power amplifier for an S-band handset device is integrated on a 3×3×0.82 mm3 die using an InGaP/GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8-2.5 GHz. Tested with a continuous wave(CW) signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than-53 dBc across the second to fifth harmonic are obtained.
Key words: S-band, power amplifier, broadband, class-F, harmonic suppression, InGaP/GaAs HBT
Abstract: A broadband class-F power amplifier for an S-band handset device is integrated on a 3×3×0.82 mm3 die using an InGaP/GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8-2.5 GHz. Tested with a continuous wave(CW) signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than-53 dBc across the second to fifth harmonic are obtained.
Key words:
S-band, power amplifier, broadband, class-F, harmonic suppression, InGaP/GaAs HBT
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Kawasaki S. The green energy harvesting winds by the RF/microwave power transmission[J]. WPTC, Key Note, 2013. |
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Kawasaki S, Yoshida S, Kobayashi Y. The S-band multi-stage amplifier for single-tone and time-division microwave communication and power transmission[J]. Asia-Pacific Microwave Conference Proceedings, 2013: 465. |
| [4] |
Song J, Wang Z, Peng Y. A 2 GHz power amplifier realized in IBM SiGe BiCMOS technology 5P Ae[J]. Journal of Semiconductors, 2008, 29(11): 2101. |
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Mury T, Vincent F, Peter G. Power-combining class-E amplifier with finite choke[J]. IEEE Trans Circuits Syst, 2011, 58(3): 451. |
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Liao H Y, Chen J H, Chiou H K. Harmonic control network for 2.6 GHz CMOS class-F power amplifier[J]. IEEE International Symposium on Circuits and Systems, 2009, 1321. |
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Raghavan A, Deukhyoun H, Moonkyun M. A 2.4 GHz high efficiency SiGe HBT power amplifier with high-Q LTCC harmonic suppression filter[J]. IEEE MTT-S International Microwave Symposium Digest, 2002, 2: 1019. |
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J M Lin, G H Zhang, Y H Zheng, S Z Li, Z H Zhang, S D Chen. Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application[J]. J. Semicond., 2015, 36(12): 125002. doi: 10.1088/1674-4926/36/12/125002.
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Manuscript received: 26 March 2015 Manuscript revised: Online: Published: 01 December 2015
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