Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

Shaohua Jia; Yuling Liu; Chenwei Wang; Chenqi Yan

doi:10.1088/1674-4926/36/12/126002

Abstract: The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of E_corr and I_corr in the Cu electrolyte at different concentrations of oxidant H₂O₂. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H₂O₂ acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H₂O₂ concentration. In addition, dishing declines with the increasing of H₂O₂ along with the optimization of planarization of the alkaline P2 slurry.

Key words: hydrogen peroxide, passivation, dishing, alkaline, Cu CMP

References:

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[1]	Liu X Y, Liu Y L, Liang Y. Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model[J]. Thin Solid Films, 2011, 520(1): 400.
[2]	Cao Y, Liu Y, Wang C W. Application of high dilution multiple alkaline copper polishing slurry in the Cu CMP[J]. Semiconductor Technology, 2013, 8: 12.
[3]	Li J, Liu Y, Wang T. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling[J]. Appl Surf Sci, 2013, 265: 764.
[4]	Lin J Y, Chou S W. Synergic effect of benzotriazole and chloride ion on Cu passivation in a phosphate electrochemical mechanical planarization electrolyte[J]. Electro, 2011, 56(9): 3303.
[5]	Li X J, Jin Z J, Su J X. Copper wiring chemical mechanical polishing technology analysis[J]. China Mechanical Engineering, 2005, 16(10): 896.
[6]	Liu W J, Liu Y L, Wang C W. Influence of different abrasive mass fraction on chemical mechanical planarization[J]. Micronanoelectron Technol, 2014, 6: 9.
[7]	Lin J Y, Chou S W, Cheng M Y. Investigation of agglomerated Cu seed on Cu oxidation after chemical mechanical planarization[J]. Appl Surf Sci, 2010, 257(2): 547.
[8]	Zhang L C, Biddut A Q, Ali Y M. Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers[J]. International Journal of Mechanical Sciences, 2010, 52(5): 657.
[9]	Fernando W J N, Lok Y H, Don M M. Experimental and modeling studies of particle removal in post silicon chemical mechanical planarization cleaning process[J]. Thin Solid Films, 2011, 519(10): 3242.
[10]	Lee H, Jeong H. A wafer-scale material removal rate profile model for copper chemical mechanical planarization[J]. International Journal of Machine Tools and Manufacture, 2011, 51(5): 395.
[11]	Lee H, Zhuang Y, Borucki L. Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization[J]. Thin Solid Films, 2010, 519(1): 259.
[12]	Hu Yi, Liu Yuling, Liu Xiaoyan. Effect of alkaline slurry on the electric character of the pattern Cu wafer[J]. Journal of Semiconductors, 2011, 32(7): 076002.
[13]	He Y G, Wang J X, Gan X W. Alkaline copper chemical mechanical polishing slurry performance study[J]. Semiconductor Technology, 2011, 36(8): 582.
[14]	Wang Y G, Zhang L C, Biddut A. Chemical effect on the material removal rate in the CMP of silicon wafers[J]. Wear, 2011, 270(3): 312.
[15]	Choi S, Doyle F M, Dornfeld D. A model of material removal and post process surface topography for copper CMP[J]. Procedia Engineering, 2011, 19: 73.
[16]	Kang M C, Kim Y J, Koo H C. Local corrosion of the oxide passivation layer during Cu chemical mechanical polishing[J]. Electrochemical and Solid-State Letters, 2009, 12(12).

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Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

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