J. Semicond. > Volume 36 > Issue 12 > Article Number: 126002

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

Shaohua Jia , Yuling Liu , , Chenwei Wang and Chenqi Yan

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Abstract: The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

Key words: hydrogen peroxidepassivationdishingalkalineCu CMP

Abstract: The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

Key words: hydrogen peroxidepassivationdishingalkalineCu CMP



References:

[1]

Liu X Y, Liu Y L, Liang Y. Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model[J]. Thin Solid Films, 2011, 520(1): 400.

[2]

Cao Y, Liu Y, Wang C W. Application of high dilution multiple alkaline copper polishing slurry in the Cu CMP[J]. Semiconductor Technology, 2013, 8: 12.

[3]

Li J, Liu Y, Wang T. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling[J]. Appl Surf Sci, 2013, 265: 764.

[4]

Lin J Y, Chou S W. Synergic effect of benzotriazole and chloride ion on Cu passivation in a phosphate electrochemical mechanical planarization electrolyte[J]. Electro, 2011, 56(9): 3303.

[5]

Li X J, Jin Z J, Su J X. Copper wiring chemical mechanical polishing technology analysis[J]. China Mechanical Engineering, 2005, 16(10): 896.

[6]

Liu W J, Liu Y L, Wang C W. Influence of different abrasive mass fraction on chemical mechanical planarization[J]. Micronanoelectron Technol, 2014, 6: 9.

[7]

Lin J Y, Chou S W, Cheng M Y. Investigation of agglomerated Cu seed on Cu oxidation after chemical mechanical planarization[J]. Appl Surf Sci, 2010, 257(2): 547.

[8]

Zhang L C, Biddut A Q, Ali Y M. Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers[J]. International Journal of Mechanical Sciences, 2010, 52(5): 657.

[9]

Fernando W J N, Lok Y H, Don M M. Experimental and modeling studies of particle removal in post silicon chemical mechanical planarization cleaning process[J]. Thin Solid Films, 2011, 519(10): 3242.

[10]

Lee H, Jeong H. A wafer-scale material removal rate profile model for copper chemical mechanical planarization[J]. International Journal of Machine Tools and Manufacture, 2011, 51(5): 395.

[11]

Lee H, Zhuang Y, Borucki L. Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization[J]. Thin Solid Films, 2010, 519(1): 259.

[12]

Hu Yi, Liu Yuling, Liu Xiaoyan. Effect of alkaline slurry on the electric character of the pattern Cu wafer[J]. Journal of Semiconductors, 2011, 32(7): 076002.

[13]

He Y G, Wang J X, Gan X W. Alkaline copper chemical mechanical polishing slurry performance study[J]. Semiconductor Technology, 2011, 36(8): 582.

[14]

Wang Y G, Zhang L C, Biddut A. Chemical effect on the material removal rate in the CMP of silicon wafers[J]. Wear, 2011, 270(3): 312.

[15]

Choi S, Doyle F M, Dornfeld D. A model of material removal and post process surface topography for copper CMP[J]. Procedia Engineering, 2011, 19: 73.

[16]

Kang M C, Kim Y J, Koo H C. Local corrosion of the oxide passivation layer during Cu chemical mechanical polishing[J]. Electrochemical and Solid-State Letters, 2009, 12(12).

[1]

Liu X Y, Liu Y L, Liang Y. Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model[J]. Thin Solid Films, 2011, 520(1): 400.

[2]

Cao Y, Liu Y, Wang C W. Application of high dilution multiple alkaline copper polishing slurry in the Cu CMP[J]. Semiconductor Technology, 2013, 8: 12.

[3]

Li J, Liu Y, Wang T. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling[J]. Appl Surf Sci, 2013, 265: 764.

[4]

Lin J Y, Chou S W. Synergic effect of benzotriazole and chloride ion on Cu passivation in a phosphate electrochemical mechanical planarization electrolyte[J]. Electro, 2011, 56(9): 3303.

[5]

Li X J, Jin Z J, Su J X. Copper wiring chemical mechanical polishing technology analysis[J]. China Mechanical Engineering, 2005, 16(10): 896.

[6]

Liu W J, Liu Y L, Wang C W. Influence of different abrasive mass fraction on chemical mechanical planarization[J]. Micronanoelectron Technol, 2014, 6: 9.

[7]

Lin J Y, Chou S W, Cheng M Y. Investigation of agglomerated Cu seed on Cu oxidation after chemical mechanical planarization[J]. Appl Surf Sci, 2010, 257(2): 547.

[8]

Zhang L C, Biddut A Q, Ali Y M. Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers[J]. International Journal of Mechanical Sciences, 2010, 52(5): 657.

[9]

Fernando W J N, Lok Y H, Don M M. Experimental and modeling studies of particle removal in post silicon chemical mechanical planarization cleaning process[J]. Thin Solid Films, 2011, 519(10): 3242.

[10]

Lee H, Jeong H. A wafer-scale material removal rate profile model for copper chemical mechanical planarization[J]. International Journal of Machine Tools and Manufacture, 2011, 51(5): 395.

[11]

Lee H, Zhuang Y, Borucki L. Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization[J]. Thin Solid Films, 2010, 519(1): 259.

[12]

Hu Yi, Liu Yuling, Liu Xiaoyan. Effect of alkaline slurry on the electric character of the pattern Cu wafer[J]. Journal of Semiconductors, 2011, 32(7): 076002.

[13]

He Y G, Wang J X, Gan X W. Alkaline copper chemical mechanical polishing slurry performance study[J]. Semiconductor Technology, 2011, 36(8): 582.

[14]

Wang Y G, Zhang L C, Biddut A. Chemical effect on the material removal rate in the CMP of silicon wafers[J]. Wear, 2011, 270(3): 312.

[15]

Choi S, Doyle F M, Dornfeld D. A model of material removal and post process surface topography for copper CMP[J]. Procedia Engineering, 2011, 19: 73.

[16]

Kang M C, Kim Y J, Koo H C. Local corrosion of the oxide passivation layer during Cu chemical mechanical polishing[J]. Electrochemical and Solid-State Letters, 2009, 12(12).

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S H Jia, Y L Liu, C W Wang, C Q Yan. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J]. J. Semicond., 2015, 36(12): 126002. doi: 10.1088/1674-4926/36/12/126002.

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Manuscript received: 23 March 2015 Manuscript revised: Online: Published: 01 December 2015

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