High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

Abstract: We present a GaSb/InAs junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology. Numerical simulations resulted in an I_OFF of ～8 × 10^-17 A/μm, I_ON of ～ 9 μA/μm, I_ON/I_OFF of ～1 × 10¹¹, subthreshold slope of 9.33 mV/dec and DIBL of ～ 87 mV/V for GaSb/InAs JLTFET at a temperature of 300 K, gate length of 20 nm, HfO₂ gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and V_DD of 0.4 V.

Key words: band tunneling (BTBT), tunnel field effect transistor (TFET), junctionless tunnel field effect transistor (JLTFET), I_ON/I_OFF ratio, low power, digital switching

References:

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[2]	Chan T Y, Chen J, Ko P K. The impact of gate-induced drain leakage current on MOSFET scaling[J]. International Electron Devices Meeting, 1987, 31.
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[7]	Critchlow D L. MOSFET scaling-the driver of VLSI technology[J]. Proc IEEE, 1999, 87(4): 659.
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[9]	Hu C. Future CMOS scaling and reliability[J]. Proc IEEE, 1993, 81(5): 682.
[10]	Li M, Yeo K H, Suk S D. Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate[J]. Symposium on VLSI Technology, 2009: 94.
[11]	Gautam R, Saxena M, Gupta R S. Gate-all-around nanowire MOSFET with catalytic metal gate for gas sensing applications[J]. IEEE Trans Nanotech, 2013, 12(6): 939.
[12]	Song Y, Zhang C, Dowdy R. III—V junctionless gate-all-around nanowire MOSFETs for high linearity low power applications[J]. IEEE Electron Device Lett, 2014, 35(3): 324.
[13]	Coquand R, Cassé M, Barraud S. Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10 nm width[J]. IEEE Symposium on VLSI Technology Digest of Technical Papers, 2012: 13.
[14]	Ray B, Mahapatra S. A new threshold voltage model for omega gate cylindrical nanowire transistor[J]. 21st International Conference on VLSI Design, 2008: 447.
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[17]	Larrieu G, Han X L. Vertical nanowire array-based field effect transistors for ultimate scaling[J]. Nanoscale, 2013, 5: 2437.
[18]	Robinson J T, Jorgolli M, Shalek A K. Vertical nanowire electrode arrays as a scalable platform for intracellular interfacing to neuronal circuits[J]. Nature Nanotechnol, 2012, 7: 180.
[19]	Simoe E, Claeys C. DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures[J]. Journal de Physique IV, Colloque C6, Supplkment au Journal de Physique III, 1994, 4: 51.
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[31]	Kranti A, Lee C W, Ferain I. Junctionless nanowire transistor: properties and design guidelines[J]. Proc 34th IEEE Eur Solid-State Device Res Conf, 2010: 357.
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[38]	Goswami, Asthana, Pranav. Junctionless tunnel field effect transistor with enhanced performance using III—V semiconductor[J]. Journal of Low Power Electronics, 2013, 9(4): 496.
[39]	Goswami Y, Ghosh B, Asthana P K. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using III—V semiconductor[J]. RSC Adv, 2014, 21(4): 10761.
[40]	Bal P, Akram M W, Mondal P. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET)[J]. J Comput Electron, 2013, 12: 782.
[41]	Koswatta S O, Koester S J, Hanench W. On the possibility of obtaining MOSFET-like performance and sub-60 mV/dec swing in 1-D broken gap tunnel transistors[J]. IEEE Trans Electron Devices, 2010, 57(12): 3222.
[42]	Khan U, Ghosh B, Akaram M W. Effect of self heating on selective buried oxide and silicon on insulator based junction less transistors[J]. Journal of Low Power Electronics, 2013, 9: 1.
[43]	Koswatta S O, Lundstram M S, Nikonov D E. Performance comparison between p—i—n tunneling transistors and conventional MOSFETs[J]. IEEE Trans Electron Devices, 2009, 56(3): 456.
[44]	Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches[J]. Nature, 2011, 479: 329.
[45]	Boucart K, Ionesscu A M. Double-gate tunnel FET with high-k gate dielectric[J]. IEEE Trans Electron Devices, 2007, 54(7): 1725.
[46]	Bhuwalka K K, Born M, Schinder M. P-channel tunnel FET transistors down to sub-50 nm channel lengths[J]. J Appl Phys, 2006, 45(4): 3106.
[47]	Kane E O. Zenner tunneling in semiconductor[J]. J Phys Chem Solids, 1960, 12(2): 181.
[48]	Mammilla B K, Nair S, Mishra R. A III—V group tunnel FETs with good switching characteristics and their circuit performance[J]. International Journal of Electronics Communication and Computer Technology (IJECCT), 2011, 1(2): 26.
[49]	Hurkx G A M, Klasssen D B M, Knuvers P G. A new recombination model for device simulation including tunnelling[J]. IEEE Trans Electron Devices, 1992, 39(2): 331.
[50]	Taur Y, Ning T H. Fundamentals of modern VLSI devices[J]. Cambridge, UK: Cambridge University Press, 1998.
[51]	Eisberg R, Resnick R. Quantum physics of atoms, molecules, solids, nuclei and particles[J]. 2nd ed. Wiley Student Edition, 2012.
[52]	Zhou G, Li R, Vasen T. Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μ A/μ m at V_DS = 0.5 V[J]. IEEE International Electron Devices Meeting (IEDM), 2013.
[53]	Li R, Lu Y, Chae S D. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field[J]. Physica Status Solidi C, 2012, 9(2): 389.
[54]	Borg B M, Dick K A, Ganjipou B. InAs/GaSb heterostructure nanowires for tunnel field-effect transistors[J]. Nano Lett, 2010, 10(10): 4080.
[55]	Dey A W, Borg B M, Ganjipour B. High-current GaSb/InAs(Sb) nanowire tunnel field-effect transistors[J]. IEEE Electron Device Lett, 2013, 34(2): 211.
[56]	Schmid H, Moselund K E, Björk M T. Fabrication of vertical InAs—Si heterojunction tunnel field effect transistors[J]. Device Research Conference (DRC), 2011, 69: 181.
[57]	Yang R, Li G H, Xu Y Z. Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30 nm for switching ASIC and SOC[J]. 6th ASICON, 2005, 2: 1102.
[58]	Anderson R L. Experiments on Ge—GaAs heterojunctions[J]. Solid-State Electron, 1962, 5: 341.
[59]	Spicer W E, Lindau I, Skeath P. Unified defect model and beyond[J]. J Vac Sci Technol, 1980, 17: 1019.
[60]	Hinkle C L, Sonnet A M, Vogel E M. GaAs interfacial self-cleaning by atomic layer deposition[J]. Appl Phys Lett, 2008, 92: 071901.
[61]	Ye P D, Wilk G D, Kwo J. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition[J]. IEEE Electron Device Lett, 2003, 24: 209.
[62]
[63]	Schenk A. A model for the field and temperature dependence of SRH lifetimes in silicon[J]. Solid-State Electron, 1992, 35(11): 1585.
[64]	Hansch W, Vogelsang T, Kirchner R. Carrier transport near the Si/SiO₂ interface of a MOSFET[J]. Solid-State Electron, 1989, 32(10): 839.
[65]	Van Zeghbroeck B. Principles of semiconductor devices[J]. .
[66]	Kumar M J, Siva M. The ground plane in buried oxide for controlling short-channel effects in nano scale SOI MOSFETs[J]. IEEE Trans Electron Devices, 2008, 55: 1554.
[67]	ITRS, http://www. itrs[J]. net accessed on 21 June, 2013.
[68]	Hu C C. Modern semiconductor devices for integrated circuits[J]. 1st ed. Pearson India, 2010.

[1]	Dallmann D A, Shenai K. Scaling constraints imposed by self-heating in submicron SO1 MOSFET's[J]. IEEE Trans Electron Devices, 1995, 42(3): 489.
[2]	Chan T Y, Chen J, Ko P K. The impact of gate-induced drain leakage current on MOSFET scaling[J]. International Electron Devices Meeting, 1987, 31.
[3]	Suzuki K, Tanaka T, Tosaka Y. Scaling theory for double-gate SO1 MOSFET's[J]. IEEE Trans Electron Devices, 1993, 40(12): 2326.
[4]	Bohr M. A 30 year retrospective on Dennard's MOSFET scaling paper[J]. IEEE Solid-State Circuits Society Newsletter, 2007, 12(1): 11.
[5]	Frank D J, Taur Y, Wong H S P. Generalized scale length for two-dimensional effects in MOSFET's[J]. IEEE Electron Device Lett, 1998, 19(10): 385.
[6]	Reddy G V, Kumar M J. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET——two-dimensional analytical modeling and simulation[J]. IEEE Trans Nanotech, 2005, 4(2): 260.
[7]	Critchlow D L. MOSFET scaling-the driver of VLSI technology[J]. Proc IEEE, 1999, 87(4): 659.
[8]	Frank D J, Dennard R H, Nowak E. Device scaling limits of Si MOSFETs and their application dependencies[J]. Proc IEEE, 2001, 89(3): 259.
[9]	Hu C. Future CMOS scaling and reliability[J]. Proc IEEE, 1993, 81(5): 682.
[10]	Li M, Yeo K H, Suk S D. Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate[J]. Symposium on VLSI Technology, 2009: 94.
[11]	Gautam R, Saxena M, Gupta R S. Gate-all-around nanowire MOSFET with catalytic metal gate for gas sensing applications[J]. IEEE Trans Nanotech, 2013, 12(6): 939.
[12]	Song Y, Zhang C, Dowdy R. III—V junctionless gate-all-around nanowire MOSFETs for high linearity low power applications[J]. IEEE Electron Device Lett, 2014, 35(3): 324.
[13]	Coquand R, Cassé M, Barraud S. Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10 nm width[J]. IEEE Symposium on VLSI Technology Digest of Technical Papers, 2012: 13.
[14]	Ray B, Mahapatra S. A new threshold voltage model for omega gate cylindrical nanowire transistor[J]. 21st International Conference on VLSI Design, 2008: 447.
[15]	Yu Z, Li L, Zhang L. Compact modeling for gate-all-around nanowire tunneling FETs (GAA NW-tFETs)[J]. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012: 1.
[16]	Yang B, Buddharaju K D, Teo S H G. Vertical silicon-nanowire formation and gate-all-around MOSFET[J]. IEEE Electron Device Lett, 2008, 29(7): 791.
[17]	Larrieu G, Han X L. Vertical nanowire array-based field effect transistors for ultimate scaling[J]. Nanoscale, 2013, 5: 2437.
[18]	Robinson J T, Jorgolli M, Shalek A K. Vertical nanowire electrode arrays as a scalable platform for intracellular interfacing to neuronal circuits[J]. Nature Nanotechnol, 2012, 7: 180.
[19]	Simoe E, Claeys C. DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures[J]. Journal de Physique IV, Colloque C6, Supplkment au Journal de Physique III, 1994, 4: 51.
[20]	Gandhi R, Chen Z, Singh N. CMOS-compatible vertical-silicon-nanowire gate-all-around p-type tunneling FETs with ≤qslant 50-mV/decade subthreshold swing[J]. IEEE Electron Device Lett, 2011, 32(11): 1504.
[21]	Tomioka K, Yoshimura M, Fukui T. A III—V nanowire channel on silicon for high-performance vertical transistors[J]. Nature, 2012, 488: 189.
[22]	Sacchetio D, Ben-Jamaal M H, De Michelil G. Fabrication and characterization of vertically stacked gate-all-around Si nanowire FET arrays[J]. Proc of the 39th European Solid-State Dev Res Conf (ESSDERC), 2009.
[23]	Shen N, Le T T, Yu H Y. Fabrication and characterization of poly-Si vertical nanowire thin film transistor[J]. World Acad of Sci, Eng and Tech, 2011: 57.
[24]	Le T T, Yu H Y, Sun Y. High-performance poly-Si vertical nanowire thin-film transistor and the inverter demonstration[J]. IEEE Electron Device Lett, 2011, 32(6): 770.
[25]	Lilienfeld J E. Method and apparatus for controlling electric current[J]. US Patent, No, 1920.
[26]	Colinge J P, Lee C W, Afzalian A. Nanowire transistors without junctions[J]. Nature Nanotechnol, 2010, 5(3): 225.
[27]	Lee C W, Afzalian A, Akhavan N D. Junctionless multigate field-effect transistor[J]. Appl Phys Lett, 2009, 94(5): 053511.
[28]	Gundapaneni S, Ganguly S, Kottantharayil A. Enhanced electrostatic integrity of short channel junctionless transistor with high-k spacers[J]. IEEE Electron Device Lett, 2011, 32(10): 1325.
[29]	Lee C W, Ferain I, Afzalian A. Performance estimation of junctionless multigate transistors[J]. Solid-State Electron, 2010, 54(2): 97.
[30]	Gundapaneni S, Ganguly S, Kottantharayil A. Bulk planar junctionless transistor (BPJLT): an attractive device alternative for scaling[J]. IEEE Electron Device Lett, 2011, 32(3): 261.
[31]	Kranti A, Lee C W, Ferain I. Junctionless nanowire transistor: properties and design guidelines[J]. Proc 34th IEEE Eur Solid-State Device Res Conf, 2010: 357.
[32]	Choi S J, Moon D I, Kim S. Nonvolatile memory by all-around-gate junctionless transistor composed of silicon nanowire on bulk substrate[J]. IEEE Electron Device Lett, 2011, 32(5): 602.
[33]	Lee C W, Yan R, Ferain I. Nanowire zero-capacitor DRAM transistors with and without junctions[J]. Proc 10th IEEE-NANO, 2010: 242.
[34]	Kranti A, Lee C, Ferain I. Junctionless 6T SRAM cell[J]. IET Electron Lett, 2010, 46(22): 1491.
[35]	Ghosh B, Akram M W. Junctionless tunnel field effect transistor[J]. IEEE Electron Device Lett, 2013, 34(5): 584.
[36]	Asthana P K, Ghosh B, Goswami Y. High-speed and low-power ultradeep-submicrometer III—V heterojunctionless tunnel field-effect transistor[J]. IEEE Trans Electron Devices, 2014, 61(2): 479.
[37]	Asthana P K, Ghosh B, Rahi S B. Optimal design of high performance H-JLTFET using HfO₂ as gate dielectric for ultra low power applications[J]. RSC Adv, 2014, 43(4): 22803.
[38]	Goswami, Asthana, Pranav. Junctionless tunnel field effect transistor with enhanced performance using III—V semiconductor[J]. Journal of Low Power Electronics, 2013, 9(4): 496.
[39]	Goswami Y, Ghosh B, Asthana P K. Analog performance of Si junctionless tunnel field effect transistor and its improvisation using III—V semiconductor[J]. RSC Adv, 2014, 21(4): 10761.
[40]	Bal P, Akram M W, Mondal P. Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET)[J]. J Comput Electron, 2013, 12: 782.
[41]	Koswatta S O, Koester S J, Hanench W. On the possibility of obtaining MOSFET-like performance and sub-60 mV/dec swing in 1-D broken gap tunnel transistors[J]. IEEE Trans Electron Devices, 2010, 57(12): 3222.
[42]	Khan U, Ghosh B, Akaram M W. Effect of self heating on selective buried oxide and silicon on insulator based junction less transistors[J]. Journal of Low Power Electronics, 2013, 9: 1.
[43]	Koswatta S O, Lundstram M S, Nikonov D E. Performance comparison between p—i—n tunneling transistors and conventional MOSFETs[J]. IEEE Trans Electron Devices, 2009, 56(3): 456.
[44]	Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches[J]. Nature, 2011, 479: 329.
[45]	Boucart K, Ionesscu A M. Double-gate tunnel FET with high-k gate dielectric[J]. IEEE Trans Electron Devices, 2007, 54(7): 1725.
[46]	Bhuwalka K K, Born M, Schinder M. P-channel tunnel FET transistors down to sub-50 nm channel lengths[J]. J Appl Phys, 2006, 45(4): 3106.
[47]	Kane E O. Zenner tunneling in semiconductor[J]. J Phys Chem Solids, 1960, 12(2): 181.
[48]	Mammilla B K, Nair S, Mishra R. A III—V group tunnel FETs with good switching characteristics and their circuit performance[J]. International Journal of Electronics Communication and Computer Technology (IJECCT), 2011, 1(2): 26.
[49]	Hurkx G A M, Klasssen D B M, Knuvers P G. A new recombination model for device simulation including tunnelling[J]. IEEE Trans Electron Devices, 1992, 39(2): 331.
[50]	Taur Y, Ning T H. Fundamentals of modern VLSI devices[J]. Cambridge, UK: Cambridge University Press, 1998.
[51]	Eisberg R, Resnick R. Quantum physics of atoms, molecules, solids, nuclei and particles[J]. 2nd ed. Wiley Student Edition, 2012.
[52]	Zhou G, Li R, Vasen T. Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μ A/μ m at V_DS = 0.5 V[J]. IEEE International Electron Devices Meeting (IEDM), 2013.
[53]	Li R, Lu Y, Chae S D. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field[J]. Physica Status Solidi C, 2012, 9(2): 389.
[54]	Borg B M, Dick K A, Ganjipou B. InAs/GaSb heterostructure nanowires for tunnel field-effect transistors[J]. Nano Lett, 2010, 10(10): 4080.
[55]	Dey A W, Borg B M, Ganjipour B. High-current GaSb/InAs(Sb) nanowire tunnel field-effect transistors[J]. IEEE Electron Device Lett, 2013, 34(2): 211.
[56]	Schmid H, Moselund K E, Björk M T. Fabrication of vertical InAs—Si heterojunction tunnel field effect transistors[J]. Device Research Conference (DRC), 2011, 69: 181.
[57]	Yang R, Li G H, Xu Y Z. Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30 nm for switching ASIC and SOC[J]. 6th ASICON, 2005, 2: 1102.
[58]	Anderson R L. Experiments on Ge—GaAs heterojunctions[J]. Solid-State Electron, 1962, 5: 341.
[59]	Spicer W E, Lindau I, Skeath P. Unified defect model and beyond[J]. J Vac Sci Technol, 1980, 17: 1019.
[60]	Hinkle C L, Sonnet A M, Vogel E M. GaAs interfacial self-cleaning by atomic layer deposition[J]. Appl Phys Lett, 2008, 92: 071901.
[61]	Ye P D, Wilk G D, Kwo J. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition[J]. IEEE Electron Device Lett, 2003, 24: 209.
[62]
[63]	Schenk A. A model for the field and temperature dependence of SRH lifetimes in silicon[J]. Solid-State Electron, 1992, 35(11): 1585.
[64]	Hansch W, Vogelsang T, Kirchner R. Carrier transport near the Si/SiO₂ interface of a MOSFET[J]. Solid-State Electron, 1989, 32(10): 839.
[65]	Van Zeghbroeck B. Principles of semiconductor devices[J]. .
[66]	Kumar M J, Siva M. The ground plane in buried oxide for controlling short-channel effects in nano scale SOI MOSFETs[J]. IEEE Trans Electron Devices, 2008, 55: 1554.
[67]	ITRS, http://www. itrs[J]. net accessed on 21 June, 2013.
[68]	Hu C C. Modern semiconductor devices for integrated circuits[J]. 1st ed. Pearson India, 2010.

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P K Asthana. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply[J]. J. Semicond., 2015, 36(2): 024003. doi: 10.1088/1674-4926/36/2/024003.

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