J. Semicond. > Volume 36 > Issue 6 > Article Number: 066001

Benzotriazole removal on post-Cu CMP cleaning

Jiying Tang 1, 2, , Yuling Liu 1, , , Ming Sun 1, , Shiyan Fan 1, and Yan Li 1,

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Abstract: This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer.

Key words: chelating agentnon-ionic surfactantBTA removalstatic etching ratecontact angle

Abstract: This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer.

Key words: chelating agentnon-ionic surfactantBTA removalstatic etching ratecontact angle



References:

[1]

Ein-Eli Y, Starosvetsky D. Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)-an electrochemical perspective[J]. Electrochimica Acta, 2007, 52: 1825.

[2]

Manivannan R, Cho B J, Xiong H. Characterization of on-amine-based post-copper chemical mechanical planarization cleaning solution[J]. Microelectron Eng, 2014, 122: 33.

[3]

Finšgar M, Milošev I. Inhibition of copper corrosion by 1, 2, 3-benzotriazole: a review[J]. Corrosion Science, 2010, 52: 2737.

[4]

Chen P L, Chen J H, Tsai M S. Post-Cu CMP cleaning for colloidal silica abrasive removal[J]. Microelectron Eng, 2004, 75: 352.

[5]

Kurodaa A, Otakea A, Bernatisa P. Development of next generation post copper CMP cleaning solutions[J]. ECS Trans, 2013, 52: 575.

[6]

Venkatesh R P, Kwon T Y, Prasad Y N. Characterization of TMAH based cleaning solution for post Cu-CMP application[J]. Microelectron Eng, 2013, 102: 74.

[7]

Miao Y, Wang S, Wang C. Effect of chelating agent on benzotriazole removal during post copper chemical mechanical polishing cleaning[J]. Microelectron Eng, 2014, 130: 18.

[8]

Gao B, Zhu Y, Tan B. A study of a new cleaning agent for post-CMP pattern wafer[J]. Adv Mater Research, 2012, 396.

[9]

Gao Baohong, Zhu Yadong, Liu Yuling. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon waters[J]. Journal of Semiconductors, 2010, 31(7): 076002.

[10]

Peng S, Zhao W, Li H. The enhancement of benzotriazole on epoxy functionalized silica sol-gel coating for copper protection[J]. Appl Surf Sci, 2013, 276: 284.

[11]

Otake A, Kuroda A, Matsumoto T. BTA removal and prevention of surface oxidation for copper post CMP cleaning[J]. International Conference on Planarization/CMP Technology, 2009: 137.

[1]

Ein-Eli Y, Starosvetsky D. Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)-an electrochemical perspective[J]. Electrochimica Acta, 2007, 52: 1825.

[2]

Manivannan R, Cho B J, Xiong H. Characterization of on-amine-based post-copper chemical mechanical planarization cleaning solution[J]. Microelectron Eng, 2014, 122: 33.

[3]

Finšgar M, Milošev I. Inhibition of copper corrosion by 1, 2, 3-benzotriazole: a review[J]. Corrosion Science, 2010, 52: 2737.

[4]

Chen P L, Chen J H, Tsai M S. Post-Cu CMP cleaning for colloidal silica abrasive removal[J]. Microelectron Eng, 2004, 75: 352.

[5]

Kurodaa A, Otakea A, Bernatisa P. Development of next generation post copper CMP cleaning solutions[J]. ECS Trans, 2013, 52: 575.

[6]

Venkatesh R P, Kwon T Y, Prasad Y N. Characterization of TMAH based cleaning solution for post Cu-CMP application[J]. Microelectron Eng, 2013, 102: 74.

[7]

Miao Y, Wang S, Wang C. Effect of chelating agent on benzotriazole removal during post copper chemical mechanical polishing cleaning[J]. Microelectron Eng, 2014, 130: 18.

[8]

Gao B, Zhu Y, Tan B. A study of a new cleaning agent for post-CMP pattern wafer[J]. Adv Mater Research, 2012, 396.

[9]

Gao Baohong, Zhu Yadong, Liu Yuling. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon waters[J]. Journal of Semiconductors, 2010, 31(7): 076002.

[10]

Peng S, Zhao W, Li H. The enhancement of benzotriazole on epoxy functionalized silica sol-gel coating for copper protection[J]. Appl Surf Sci, 2013, 276: 284.

[11]

Otake A, Kuroda A, Matsumoto T. BTA removal and prevention of surface oxidation for copper post CMP cleaning[J]. International Conference on Planarization/CMP Technology, 2009: 137.

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J Y Tang, Y L Liu, M Sun, S Y Fan, Y Li. Benzotriazole removal on post-Cu CMP cleaning[J]. J. Semicond., 2015, 36(6): 066001. doi: 10.1088/1674-4926/36/6/066001.

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History

Manuscript received: 26 November 2014 Manuscript revised: Online: Published: 01 June 2015

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