J. Semicond. > Volume 36 > Issue 6 > Article Number: 065010

A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

Jincan Zhang 1, , Yuming Zhang 2, , Hongliang Lü 2, , , Yimen Zhang 2, , Bo Liu 1, , Leiming Zhang 1, and Fei Xiang 1,

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Abstract: A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of-94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.

Key words: voltage controlled oscillatorInGaP/GaAs HBTKu bandwide tuning rangehigh output power

Abstract: A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of-94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.

Key words: voltage controlled oscillatorInGaP/GaAs HBTKu bandwide tuning rangehigh output power



References:

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Zhang Jincan, Zhang Yuming, Lü Hongliang. A broadband regenerative frequency divider in InGaP/GaAs HBT technology[J]. Journal of Semiconductors, 2014, 35(7): 075004.

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Liu G, Trasser A, Schumacher H. 33-43 GHz and 66-86 GHz VCO with high output power in an 80 GHz SiGe HBT technology[J]. IEEE Microw Wireless Compon Lett, 2010, 20(10): 557.

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Lu T Y, Yu C Y, Chen W Z. Wide tunning range 60 GHz VCO and 40 GHz DCO using single variable inductor[J]. IEEE Trans Circuits Syst I: Regular Papers, 2013, 60(2): 257.

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Chiang P Y, Wang Z, Momeni O. A silicon-based 0.3 THz frequency synthesizer with wide locking range[J]. IEEE J Solid-State Circuits, 2014, 49(12): 1.

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[1]

Huang G C, Fusco V. A 94 GHz wide tuning range SiGe bipolar VCO using a self-mixing technique[J]. IEEE Microw Wireless Compon Lett, 2011, 21(2): 86.

[2]

Zhang Jincan, Zhang Yuming, Lü Hongliang. A broadband regenerative frequency divider in InGaP/GaAs HBT technology[J]. Journal of Semiconductors, 2014, 35(7): 075004.

[3]

Huang Yinkun, Wu Danyu, Zhou Lei. A 23 GHz low power VCO in SiGe BiCMOS technology[J]. Journal of Semiconductors, 2013, 34(4): 045003.

[4]

Ansari K T, Ross T N, Plett C. Ku-band high output power multiphase rotary travelling-wave VCO in SiGe BiCMOS[J]. Proceedings of the 8th European Microwave Integrated Circuits Conference, 2013: 97.

[5]

Lai S, Bao M Q, Kuylenstierna D. Integrated wideband and low phase-noise signal source using two voltage-controlled oscillators and a mixer[J]. IET Microwaves Antennas & Propagation, 2013, 7(2): 123.

[6]

Kuylenstierna D, Lai S, Bao M Q. Design of low phase-noise oscillator s and wide band VCOs in InGaP HBT technology[J]. IEEE Trans Microw Theory Tech, 2012, 60(11): 3420.

[7]

Kang S W, Chien J C, Niknejad A M. A W-band low-noise PLL with a fundamental VCO in SiGe for millimeter-wave applications[J]. IEEE Trans Microw Theory Tech, 2014, 62(10): 2390.

[8]

Voinigescu S P, Tomkins A, Dacquay E. A study of SiGe HBT signal sources in the 220-330-GHz range[J]. IEEE J Solid-State Circuits, 2013, 48(9): 2011.

[9]

Andreani P, Wang X Y, Vandi L. A study of phase noise in Colpitts and LC-tank CMOS oscillators[J]. IEEE J Solid-State Circuits, 2005, 40(5): 1107.

[10]

Kozhuharov R, Kuylestierna D, Zirath H. 24 GHz InGaP-GaAs HBT push-push VCO with broadband tuning range[J]. Proceedings of the 4th European Microwave Integrated Circuits Conference, 2009: 242.

[11]

Hossain M, Kraemer T, Ostermay I. A 246 GHz hetero-integrated frequency source in InP-on-BiCMOS Technology[J]. IEEE Microw Wireless Compon Lett, 2014, 24(7): 469.

[12]

Liu G, Trasser A, Schumacher H. 33-43 GHz and 66-86 GHz VCO with high output power in an 80 GHz SiGe HBT technology[J]. IEEE Microw Wireless Compon Lett, 2010, 20(10): 557.

[13]

Lu T Y, Yu C Y, Chen W Z. Wide tunning range 60 GHz VCO and 40 GHz DCO using single variable inductor[J]. IEEE Trans Circuits Syst I: Regular Papers, 2013, 60(2): 257.

[14]

Chiang P Y, Wang Z, Momeni O. A silicon-based 0.3 THz frequency synthesizer with wide locking range[J]. IEEE J Solid-State Circuits, 2014, 49(12): 1.

[15]

Cheng S J, Li H H, Feng W S. A novel low-power voltage-controlled oscillator with complementary switch[J]. IEEE 15th Annual Wireless and Microwave Technology Conference (WAMICON), 2014: 1.

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J C Zhang, Y M Zhang, H Lü, Y M Zhang, B Liu, L M Zhang, F Xiang. A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology[J]. J. Semicond., 2015, 36(6): 065010. doi: 10.1088/1674-4926/36/6/065010.

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Manuscript received: 17 December 2014 Manuscript revised: Online: Published: 01 June 2015

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