J. Semicond. > Volume 37 > Issue 5 > Article Number: 054001

Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands

Pranati Panda and Gananath Dash

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Abstract: The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time (MITATT) diodes for operation at 120 GHz, 220 GHz and 0.35 THz using some computer simulation methods developed by our group. The salient features of our results have uncovered some peculiarities of the GaN based MITATT devices. An efficiency of more than 20% right up to a frequency of 0.35 THz (from the GaN MITATT diode) seems highly encouraging but a power output of only 0.76 W is indicative of its dismal fate. The existence of a noise measure minimum at the operating frequency of 0.35 THz is again exhilarating but the value of the minimum is miserably high i.e. more than 33 dB. Thus, although GaN is a wide band gap semiconductor, the disparate carrier velocities prevent its full potential from being exploited for application as MTATT diodes.

Key words: GaNMITATTtunnelingcarrier velocity

Abstract: The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time (MITATT) diodes for operation at 120 GHz, 220 GHz and 0.35 THz using some computer simulation methods developed by our group. The salient features of our results have uncovered some peculiarities of the GaN based MITATT devices. An efficiency of more than 20% right up to a frequency of 0.35 THz (from the GaN MITATT diode) seems highly encouraging but a power output of only 0.76 W is indicative of its dismal fate. The existence of a noise measure minimum at the operating frequency of 0.35 THz is again exhilarating but the value of the minimum is miserably high i.e. more than 33 dB. Thus, although GaN is a wide band gap semiconductor, the disparate carrier velocities prevent its full potential from being exploited for application as MTATT diodes.

Key words: GaNMITATTtunnelingcarrier velocity



References:

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Eisele H, Singh M, Wu Y R. AlGaN/GaN heterostructure transit-time devices: a novel device concept for submillimeter-wave sources[J]. Proceedings of 16th International Symposium on Space Terahertz Technology, Chalmers, Gotenborg, Sweden, 2005: 382.

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Wei X, Zhao R, Shao M. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si(111) substrate[J]. Nanoscale Research Letters, 2013, 8(1): 112.

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Banerjee A, Mitra M. Analysis of Ka band DDR IMPATT diode based on different solid state materials[J]. International Journal of Soft Computing and Engineering, 2013, 3: 6.

[5]

Panda A K, Parida R K, Agrawala N C. A comparative study on the high band gap materials (GaN and SiC)- based IMPATTs[J]. Asia-Pacific Microwave Conference Proceedings, Bangkok, 2007.

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Ghosh D, Chakrabarti B, Mitra M. A detailed computer analysis of SiC and GaN based IMPATT diodes operating at Ka, V and W bands[J]. International Journal of Scientific and Engineering Research, 2012, 3: 1.

[7]

Wu T. Performance of GaN Schottky contact MITATT diode at terahertz frequency[J]. Electron Lett, 2008, 44(14): 883.

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Albrecht J D, Wang R P, Ruden P P. Electron transport characteristics of GaN for high temperature device modelling[J]. J Appl Phys, 1998, 83: 4777.

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Oguzman I H, Kolnik J, Brennan K F. Hole transport properties of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure[J]. J Appl Phys, 1996, 80: 4429.

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Dash G N, Pati S P. A generalised simulation method for MITATT mode operation and studies on the influence of tunnel current on IMPATT properties[J]. Semicond Sci Technol, 1992, 7: 222.

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Haddad G I, Trew R J. Microwave solid-state active devices[J]. IEEE Trans Microwave Theory Tech, 2002, 50(3): 760.

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Dalal V L. Hole velocity in p-GaAs[J]. Appl Phys Lett, 1970, 16: 489.

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Houston P A, Evans A G R. Electron drift velocity in n-GaAs at high electric field[J]. Solid State Electron, 1977, 20: 197.

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Gummel H K, Blue J L. A small signal theory of avalanche noise in IMPATT diodes[J]. IEEE Trans Electron Devices, 1967, 14: 569.

[16]

Dash G N, Mishra J K, Panda A K. Noise in mixed tunnelling avalanche transit time (MITATT) diodes[J]. Solid State Electron, 1996, 39: 1473.

[17]

Panda P, Padhi S N, Dash G N. High efficiency SiC terahertz source in mixed tunnelling avalanche transit time mode[J]. World Journal of Nano Science and Engineering, 2014, 4: 143.

[18]

Mishra J K, Dash G N, Mishra I P. Simulation studies on the noise behaviour of double avalanche region diodes[J]. Semicond Sci Technol, 2001, 16: 895.

[1]

Wang L, Mohammed F M, Adesida I. Formation mechanism of Ohmic contacts on AlGaN/GaN heterostructure: electrical and microstructural characterizations[J]. J Appl Phys, 2008, 103: 93516.

[2]

Eisele H, Singh M, Wu Y R. AlGaN/GaN heterostructure transit-time devices: a novel device concept for submillimeter-wave sources[J]. Proceedings of 16th International Symposium on Space Terahertz Technology, Chalmers, Gotenborg, Sweden, 2005: 382.

[3]

Wei X, Zhao R, Shao M. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si(111) substrate[J]. Nanoscale Research Letters, 2013, 8(1): 112.

[4]

Banerjee A, Mitra M. Analysis of Ka band DDR IMPATT diode based on different solid state materials[J]. International Journal of Soft Computing and Engineering, 2013, 3: 6.

[5]

Panda A K, Parida R K, Agrawala N C. A comparative study on the high band gap materials (GaN and SiC)- based IMPATTs[J]. Asia-Pacific Microwave Conference Proceedings, Bangkok, 2007.

[6]

Ghosh D, Chakrabarti B, Mitra M. A detailed computer analysis of SiC and GaN based IMPATT diodes operating at Ka, V and W bands[J]. International Journal of Scientific and Engineering Research, 2012, 3: 1.

[7]

Wu T. Performance of GaN Schottky contact MITATT diode at terahertz frequency[J]. Electron Lett, 2008, 44(14): 883.

[8]

http://www . ioffe[J]. .

[9]

Albrecht J D, Wang R P, Ruden P P. Electron transport characteristics of GaN for high temperature device modelling[J]. J Appl Phys, 1998, 83: 4777.

[10]

Oguzman I H, Kolnik J, Brennan K F. Hole transport properties of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure[J]. J Appl Phys, 1996, 80: 4429.

[11]

Dash G N, Pati S P. A generalised simulation method for MITATT mode operation and studies on the influence of tunnel current on IMPATT properties[J]. Semicond Sci Technol, 1992, 7: 222.

[12]

Haddad G I, Trew R J. Microwave solid-state active devices[J]. IEEE Trans Microwave Theory Tech, 2002, 50(3): 760.

[13]

Dalal V L. Hole velocity in p-GaAs[J]. Appl Phys Lett, 1970, 16: 489.

[14]

Houston P A, Evans A G R. Electron drift velocity in n-GaAs at high electric field[J]. Solid State Electron, 1977, 20: 197.

[15]

Gummel H K, Blue J L. A small signal theory of avalanche noise in IMPATT diodes[J]. IEEE Trans Electron Devices, 1967, 14: 569.

[16]

Dash G N, Mishra J K, Panda A K. Noise in mixed tunnelling avalanche transit time (MITATT) diodes[J]. Solid State Electron, 1996, 39: 1473.

[17]

Panda P, Padhi S N, Dash G N. High efficiency SiC terahertz source in mixed tunnelling avalanche transit time mode[J]. World Journal of Nano Science and Engineering, 2014, 4: 143.

[18]

Mishra J K, Dash G N, Mishra I P. Simulation studies on the noise behaviour of double avalanche region diodes[J]. Semicond Sci Technol, 2001, 16: 895.

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Pranati Panda, G Dash. Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands[J]. J. Semicond., 2016, 37(5): 054001. doi: 10.1088/1674-4926/37/5/054001.

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Manuscript received: 03 August 2015 Manuscript revised: Online: Published: 01 May 2016

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