J. Semicond. > Volume 39 > Issue 7 > Article Number: 074004

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

Haipeng Zhang 1, , Qiang Zhang 1, , , Mi Lin 1, , Weifeng Lü 1, , Zhonghai Zhang 1, , Jianling Bai 1, , Jian He 1, , Bin Wang 1, and Dejun Wang 2,

+ Author Affilications + Find other works by these authors

PDF

Turn off MathJax

Abstract: To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green’s function (NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.

Key words: GaN/InGaN/AlGaNMQWRTDtotal NDR region widthhysteresis characteristicMVL

Abstract: To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green’s function (NEGF) method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.

Key words: GaN/InGaN/AlGaNMQWRTDtotal NDR region widthhysteresis characteristicMVL



References:

[1]

Ambacher O, Smart J, Shealy J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys, 1999, 85(1): 3222

[2]

Fiorentini V, Bernardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl Phys Lett, 2002, 80(7): 1204

[3]

Chowdhury S, Biswas D. Performances comparison of Si, GaAs and GaN based resonant tunneling diode in presence and absence of electric field. IJ-Nano, 2012, 1(2): 39

[4]

Yahyaoui N, Sfina N, Nasrallah S A, et al. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes. Comput Phys Commun, 2014, 185(12): 3119

[5]

Chowdhury S, Chattaraj S, Biswas D. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate. J Semicond, 2015, 36(4): 044001

[6]

Zhang H P, Ning X, Lin M, et al. A GaAs/AlGaAs based asymmetrical DBS (ADBS) RTD. Proc of the 2015 International Conference on Communication Technology, 2015: 380

[7]

Rached A, Bhouri A, Sakr S, et al. Self-consistent vertical transport calculations in AlxGa1-xN/GaN based resonant tunneling diode. Superlattices Microstruct, 2016, 91: 37

[8]

Sankaranarayanan S, Saha D. Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation. Superlattices Microstruct, 2016, 98: 174

[9]

Singh M M, Siddiqui M J. Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths. Mater Sci Semicond Process, 2017, 58: 89

[10]

Zhang H P, Hao X L, Lin M, et al. A Restrain Method of Polarization Effect in GaN/AlGaN RTD. Adv Comput Sci Res, 2017, 58: 169

[11]

Zubialevich V Z, Rzheutski M V, Li H, et al. InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter. J Lumin, 2018, 194: 797

[12]

Sandeep S, Swaroop G, Dipankar S. Polarization modulation in GaN-based double-barrier resonant tunneling diodes. Appl Phys Express, 2014, 7(9): 095201

[13]

Xiang W, Wang G, Hao H, et al. InAs homoepitaxy and InAs/AlSb/GaSb resonat interband tunneling diodes on inas substrate. J Cryst Growth, 2016, 443(1): 85

[14]

Monozon B S, Schmelcher P. Fine structure of the exciton electroabsorption in semiconductor superlattices. Physica B, 2017, 507: 61

[15]

Kumar V, Sinha A, Singh B P, et al. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors. Phys Lett A, 2016, 380: 3630

[16]

Wang Q, Gao X, Xu Y, et al. Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs. J Alloys Compounds, 2017, 726: 460

[1]

Ambacher O, Smart J, Shealy J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J Appl Phys, 1999, 85(1): 3222

[2]

Fiorentini V, Bernardini F, Ambacher O. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl Phys Lett, 2002, 80(7): 1204

[3]

Chowdhury S, Biswas D. Performances comparison of Si, GaAs and GaN based resonant tunneling diode in presence and absence of electric field. IJ-Nano, 2012, 1(2): 39

[4]

Yahyaoui N, Sfina N, Nasrallah S A, et al. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes. Comput Phys Commun, 2014, 185(12): 3119

[5]

Chowdhury S, Chattaraj S, Biswas D. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate. J Semicond, 2015, 36(4): 044001

[6]

Zhang H P, Ning X, Lin M, et al. A GaAs/AlGaAs based asymmetrical DBS (ADBS) RTD. Proc of the 2015 International Conference on Communication Technology, 2015: 380

[7]

Rached A, Bhouri A, Sakr S, et al. Self-consistent vertical transport calculations in AlxGa1-xN/GaN based resonant tunneling diode. Superlattices Microstruct, 2016, 91: 37

[8]

Sankaranarayanan S, Saha D. Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation. Superlattices Microstruct, 2016, 98: 174

[9]

Singh M M, Siddiqui M J. Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths. Mater Sci Semicond Process, 2017, 58: 89

[10]

Zhang H P, Hao X L, Lin M, et al. A Restrain Method of Polarization Effect in GaN/AlGaN RTD. Adv Comput Sci Res, 2017, 58: 169

[11]

Zubialevich V Z, Rzheutski M V, Li H, et al. InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter. J Lumin, 2018, 194: 797

[12]

Sandeep S, Swaroop G, Dipankar S. Polarization modulation in GaN-based double-barrier resonant tunneling diodes. Appl Phys Express, 2014, 7(9): 095201

[13]

Xiang W, Wang G, Hao H, et al. InAs homoepitaxy and InAs/AlSb/GaSb resonat interband tunneling diodes on inas substrate. J Cryst Growth, 2016, 443(1): 85

[14]

Monozon B S, Schmelcher P. Fine structure of the exciton electroabsorption in semiconductor superlattices. Physica B, 2017, 507: 61

[15]

Kumar V, Sinha A, Singh B P, et al. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors. Phys Lett A, 2016, 380: 3630

[16]

Wang Q, Gao X, Xu Y, et al. Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs. J Alloys Compounds, 2017, 726: 460

[1]

Zhu Hua, Li Cuiyun, Mo Chunlan, Jiang Fengyi, Zhang Meng. TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD. J. Semicond., 2008, 29(3): 539.

[2]

Swagata Dey, Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen. Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode. J. Semicond., 2018, 39(10): 104003. doi: 10.1088/1674-4926/39/10/104003

[3]

Guo Weilian, Liang Huilai, Zhang Shilin, Hu Liuchang, Mao Luhong, Song Ruiliang, Niu Pingjuan, Wang Wei, Shang Yuehui, Wang Guoquan, Feng Zhen. Design and Fabrication of a Planar RTD and Its MOBILE. J. Semicond., 2006, 27(12): 2167.

[4]

Liang Huilai, Guo Weilian, Song Ruiliang, Qi Haitao, Zhang Shilin, Hu Liuchang, Li Jianheng, Mao Luhong, Shang Yuehui, Feng Zhen, Tian Guoping, Li Yali. Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure. J. Semicond., 2007, 28(10): 1594.

[5]

Tong Zhaomin, Xue Chenyang, Lin Yijie, Chen Shang. Mechanic-Electric Coupling Characteristics of a Resonant Tunneling Diode. J. Semicond., 2008, 29(10): 1907.

[6]

Subhra Chowdhury, Swarnabha Chattaraj, Dhrubes Biswas. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate. J. Semicond., 2015, 36(4): 044001. doi: 10.1088/1674-4926/36/4/044001

[7]

Du Rui, Dai Yang, Yang Fuhua. Design of a Frequency Divider with Reduced Complexity Based on a Resonant Tunneling Diode. J. Semicond., 2008, 29(7): 1292.

[8]

Han Chunlin, Chen Chen, Zou Penghui, Zhang Yang, Zeng Yiping, Xue Fangshi, Gao Jianfeng, Zhang Zheng, Geng Tao. InP-base resonant tunneling diodes. J. Semicond., 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001

[9]

Dai Yang, Huang Yinglong, Liu Wei, Ma Long, Yang Fuhua, Wang Liangchen, Zeng Yiping, Zheng Houzhi. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT. J. Semicond., 2007, 28(3): 332.

[10]

Wang Xiaohua, Zhan Wang, Liu Guojun. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED. J. Semicond., 2007, 28(1): 104.

[11]

Chen Zhizhong, Xu Ke, Qin Zhixin, Yu Tongjun, Tong Yuzhen, Song Jinde, Lin Liang, Liu Peng, Qi Shengli, Zhang Guoyi. Origins of Double Emission Peaks in Electroluminescence Spectrum from InGaN/GaN MQW LED. J. Semicond., 2007, 28(7): 1121.

[12]

Mark N. Lockrey, Matthew R. Phillips. Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system. J. Semicond., 2011, 32(1): 012001. doi: 10.1088/1674-4926/32/1/012001

[13]

Wang Chong, Yue Yuanzheng, Ma Xiaohua, Hao Yue, Feng Qian, Zhang Jincheng. Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs. J. Semicond., 2008, 29(8): 1557.

[14]

Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong, Zhang Guoyi. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs. J. Semicond., 2006, 27(S1): 20.

[15]

Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT. J. Semicond., 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002

[16]

Wang Wei, Niu Pingjuan, Guo Weilian, Yu Xin, Zhang Shilin. A Novel Oscillator Based on RTD/MOSFET. J. Semicond., 2007, 28(2): 289.

[17]

Xiaojia Wan, Xiaoliang Wang, Hongling Xiao, Chun Feng, Lijuan Jiang, Shenqi Qu, Zhanguo Wang, Xun Hou. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors. J. Semicond., 2013, 34(10): 104002. doi: 10.1088/1674-4926/34/10/104002

[18]

Hu Yanlong, Liang Huilai, Li Yihuan, Zhang Shilin, Mao Luhong, Guo Weilian. Monolithically Fabricated OEICs Using RTD and MSM. J. Semicond., 2006, 27(4): 641.

[19]

Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, Guo Weilian. Fabrication of a High-Performance RTD on InP Substrate. J. Semicond., 2007, 28(12): 1945.

[20]

Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Liu Jun, Qiao Hui. RTD’s Relaxation Oscillation Characteristics with Applied Pressure. J. Semicond., 2008, 29(1): 39.

Search

Advanced Search >>

GET CITATION

H P Zhang, Q Zhang, M Lin, W Lü, Z H Zhang, J L Bai, J He, B Wang, D J Wang, A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability[J]. J. Semicond., 2018, 39(7): 074004. doi: 10.1088/1674-4926/39/7/074004.

Export: BibTex EndNote

Article Metrics

Article views: 802 Times PDF downloads: 33 Times Cited by: 0 Times

History

Manuscript received: 23 October 2017 Manuscript revised: 09 February 2018 Online: Accepted Manuscript: 04 April 2018 Uncorrected proof: 12 April 2018 Published: 01 July 2018

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误