2019年JOS入选“中国科技期刊卓越行动计划”
2020年11月JOS被EI数据库收录
J. Semicond. > Volume 40 > Issue 12 > Article Number: 122901

# A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

C. Usha , and P. Vimala

Turn off MathJax

Abstract: This paper presents a compact two-dimensional analytical device model of surface potential, in addition to electric field of triple-material double-gate (TMDG) tunnel FET. The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source. The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage, lateral and vertical electric field. Because the TMDG TFET has a simple compact structure, the surface potential is computationally efficient and, therefore, may be utilized to analyze and characterize the gate-controlled devices. Furthermore, using Kane's model, the current across the drain can be modeled. The graph results achieved from this device model are close to the data collected from the technology computer aided design (TCAD) simulation.

Abstract: This paper presents a compact two-dimensional analytical device model of surface potential, in addition to electric field of triple-material double-gate (TMDG) tunnel FET. The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source. The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage, lateral and vertical electric field. Because the TMDG TFET has a simple compact structure, the surface potential is computationally efficient and, therefore, may be utilized to analyze and characterize the gate-controlled devices. Furthermore, using Kane's model, the current across the drain can be modeled. The graph results achieved from this device model are close to the data collected from the technology computer aided design (TCAD) simulation.

References:

 [1] Toh E H, Wang G H, Samudra G, et al. Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. J Appl Phys, 2008, 103, 104504 [2] Koswatta S O, Lundstrom M S, Nikonov S E, et al. Performance comparison between p–i–n tunneling transistors and conventional MOSFETs. IEEE Trans Electron Devices, 2009, 56, 456 [3] Seabaugh A C, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE, 2010, 98, 2095 [4] Saurabh S, Kumar M J. Novel attributes of a dual material gate nanoscale tunnel field-effect transistor. IEEE Trans Electron Devices, 2011, 58, 404 [5] Gnani E, Gnudi A, Reggiani S, et al. Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model. Solid-State Electron, 2013, 84, 96 [6] Boucart K, Ionescu A M. A new definition of threshold voltage in tunnel FETs. Solid State Electron, 2008, 52, 1318 [7] Vandenberghe W, Verhulst A, Greseneken G, et al. Analytical model for tunnel field- effect transistor. Proc MELECON, 2008, 923 [8] Mojunder N N, Roy K. Band-to-Band tunneling ballistic low-power digital circuits and memories. IEEE Trans Electron Devices, 2009, 56, 2193 [9] Vandenberghe W, Verhulst A, Greseneken G, et al. Analytical model for point and line tunneling in a tunnel field-effect transistor. Proc Int Conf SISPAD, 2008, 137 [10] Bardon M G, Neves H P, Puerd R, et al. Pseudo-two dimensional model for double gate tunnel FETs considering the junctions depletion regions. IEEE Trans Electron Devices, 2010, 57, 827 [11] Liu L, Mohata D, Datta S. Scaling length theory of double-gate interband tunnel field-effect transistors. IEEE Trans Electron Devices, 2012, 59, 902 [12] Lee M J, Choi W Y. Analytical model of single-gate silicon on insulator tunneling field effect tansistors (TFETs). Solid State Electron, 2011, 63, 110 [13] Zhang L, Lin X, He J, et al. Analytical charge model for double gate tunnel FETs. IEEE Trans Electron Devices, 2012, 59, 3217 [14] Pan A, Chui C O. A quasi-analytical model for double-gate tunneling field effect transistors. IEEE Trans Electron Devices, 2012, 33, 1468 [15] Bhushan B, Nayak K, Rao V R. DC compact model for SOI tunnel field-effect tansistors. IEEE Trans Electron Devices, 2012, 59, 2635 [16] Verhulst A S, Leoneli D, Rooyackers R, et al. Drain voltage dependent analytical model of tunnel field-effect transistor. J Appl Phys, 2011, 110, 024510 [17] Dobrovolsky V, Sizov F. Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor. J App Phys, 2011, 110, 114513 [18] Wan J, Royer C L, Zaslavsky A, et al. A tunneling field effect transistor model conbining interband tunneling with channel transport. J Appl Phys, 2011, 110, 104503 [19] Vishnoi R, Kumar M J. Compact analytical model of dual material gate tunneling field-effect transistor using interband tunneling and channel transport. IEEE Trans Electron Devices, 2014, 61, 1936 [20] Samuel T S A, Balamurugan N B. An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications. J. Elect Eng Technol, 2014, 9, 247 [21] Vishnoi R, Kumar M J. 2-D analytical model for the threshold voltage of a tunneling FET with localized charges. IEEE Trans Electron Devices, 2014, 61, 3054 [22] Pandey P, Vishnoi R, Kumar M J. A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling. J Comput Electron, 2014, 14, 280 [23] Zhang L, Chan M. SPICE modelling of double-gate tunnel-FETs including channel transports. IEEE Trans Electron Devices, 2014, 61, 300 [24] Vishnoi R, Kumar M J. An accurate compact analytical model for the drain current of a TFET from subthreshold to strong inversion. IEEE Trans Electron Devices, 2015, 62, 478 [25] Dash S, Mishra G P. A two-dimensional analytical cylindrical gate tunnel FET (CG-TFET) model: Impact of shortest tunneling distance. Adv Natural Sci, Nanosci Nanotechnol, 2015, 6, 035005 [26] Bagga N, Sarkar S K. An analytical model for tunnel barrier modulation in triple metal double gate TFET. IEEE Trans Electron Devices, 2015, 62, 2136 [27] Dash S, Mishra G P. A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET). Superlattices Microstruct, 2015, 86, 211 [28] Noor S L, Safa S, Khan M Z R. Dual-material double-gate tunnel FET: Gate threshold voltage modeling and extraction. J Comput Electron, 2016, 15, 763
 [1] Toh E H, Wang G H, Samudra G, et al. Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. J Appl Phys, 2008, 103, 104504 [2] Koswatta S O, Lundstrom M S, Nikonov S E, et al. Performance comparison between p–i–n tunneling transistors and conventional MOSFETs. IEEE Trans Electron Devices, 2009, 56, 456 [3] Seabaugh A C, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE, 2010, 98, 2095 [4] Saurabh S, Kumar M J. Novel attributes of a dual material gate nanoscale tunnel field-effect transistor. IEEE Trans Electron Devices, 2011, 58, 404 [5] Gnani E, Gnudi A, Reggiani S, et al. Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model. Solid-State Electron, 2013, 84, 96 [6] Boucart K, Ionescu A M. A new definition of threshold voltage in tunnel FETs. Solid State Electron, 2008, 52, 1318 [7] Vandenberghe W, Verhulst A, Greseneken G, et al. Analytical model for tunnel field- effect transistor. Proc MELECON, 2008, 923 [8] Mojunder N N, Roy K. Band-to-Band tunneling ballistic low-power digital circuits and memories. IEEE Trans Electron Devices, 2009, 56, 2193 [9] Vandenberghe W, Verhulst A, Greseneken G, et al. Analytical model for point and line tunneling in a tunnel field-effect transistor. Proc Int Conf SISPAD, 2008, 137 [10] Bardon M G, Neves H P, Puerd R, et al. Pseudo-two dimensional model for double gate tunnel FETs considering the junctions depletion regions. IEEE Trans Electron Devices, 2010, 57, 827 [11] Liu L, Mohata D, Datta S. Scaling length theory of double-gate interband tunnel field-effect transistors. IEEE Trans Electron Devices, 2012, 59, 902 [12] Lee M J, Choi W Y. Analytical model of single-gate silicon on insulator tunneling field effect tansistors (TFETs). Solid State Electron, 2011, 63, 110 [13] Zhang L, Lin X, He J, et al. Analytical charge model for double gate tunnel FETs. IEEE Trans Electron Devices, 2012, 59, 3217 [14] Pan A, Chui C O. A quasi-analytical model for double-gate tunneling field effect transistors. IEEE Trans Electron Devices, 2012, 33, 1468 [15] Bhushan B, Nayak K, Rao V R. DC compact model for SOI tunnel field-effect tansistors. IEEE Trans Electron Devices, 2012, 59, 2635 [16] Verhulst A S, Leoneli D, Rooyackers R, et al. Drain voltage dependent analytical model of tunnel field-effect transistor. J Appl Phys, 2011, 110, 024510 [17] Dobrovolsky V, Sizov F. Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor. J App Phys, 2011, 110, 114513 [18] Wan J, Royer C L, Zaslavsky A, et al. A tunneling field effect transistor model conbining interband tunneling with channel transport. J Appl Phys, 2011, 110, 104503 [19] Vishnoi R, Kumar M J. Compact analytical model of dual material gate tunneling field-effect transistor using interband tunneling and channel transport. IEEE Trans Electron Devices, 2014, 61, 1936 [20] Samuel T S A, Balamurugan N B. An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications. J. Elect Eng Technol, 2014, 9, 247 [21] Vishnoi R, Kumar M J. 2-D analytical model for the threshold voltage of a tunneling FET with localized charges. IEEE Trans Electron Devices, 2014, 61, 3054 [22] Pandey P, Vishnoi R, Kumar M J. A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling. J Comput Electron, 2014, 14, 280 [23] Zhang L, Chan M. SPICE modelling of double-gate tunnel-FETs including channel transports. IEEE Trans Electron Devices, 2014, 61, 300 [24] Vishnoi R, Kumar M J. An accurate compact analytical model for the drain current of a TFET from subthreshold to strong inversion. IEEE Trans Electron Devices, 2015, 62, 478 [25] Dash S, Mishra G P. A two-dimensional analytical cylindrical gate tunnel FET (CG-TFET) model: Impact of shortest tunneling distance. Adv Natural Sci, Nanosci Nanotechnol, 2015, 6, 035005 [26] Bagga N, Sarkar S K. An analytical model for tunnel barrier modulation in triple metal double gate TFET. IEEE Trans Electron Devices, 2015, 62, 2136 [27] Dash S, Mishra G P. A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET). Superlattices Microstruct, 2015, 86, 211 [28] Noor S L, Safa S, Khan M Z R. Dual-material double-gate tunnel FET: Gate threshold voltage modeling and extraction. J Comput Electron, 2016, 15, 763
 [1] Xiaoyu Ma, Wanling Deng, Junkai Huang. Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs. J. Semicond., 2014, 35(3): 032002. [2] Huifang Xu, Yuehua Dai, Ning Li, Jianbin Xu. A 2-D semi-analytical model of double-gate tunnel field-effect transistor. J. Semicond., 2015, 36(5): 054002. [3] Jian Qin, Ruohe Yao. Modeling of current-voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution. J. Semicond., 2015, 36(12): 124005. [4] Sarvesh Dubey, Kumar Tiwari, S. Jit. On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile. J. Semicond., 2013, 34(5): 054001. [5] Xiao Deyuan, Xie Joseph, Chi Minhwa, Wang Xi, Yu Yuehui. Simulation of Gate-All-Around Cylindrical Transistors for Sub-10 Nanometer Scaling. J. Semicond., 2008, 29(3): 447. [6] Li Xiyue, Deng Wanling, Huang Junkai. A physical surface-potential-based drain current model for polysilicon thin-film transistors. J. Semicond., 2012, 33(3): 034005. [7] T. S. Arun Samuel, N. B. Balamurugan. Analytical modeling and simulation of germanium single gate silicon on insulator TFET. J. Semicond., 2014, 35(3): 034002. [8] Chih-Tang Sah, Bin B.Jie. The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base). J. Semicond., 2007, 28(12): 1849. [9] Jie Binbin, Sah Chih-Tang. The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base). J. Semicond., 2008, 29(1): 1. [10] Jie Binbin, Sah Chih-Tang. The Bipolar Field-Effect Transistor:IV.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base). J. Semicond., 2008, 29(2): 193. [11] Santosh K. Gupta, Srimanta Baishya. Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects. J. Semicond., 2013, 34(7): 074001. [12] He Hongyu, Zheng Xueren. Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime. J. Semicond., 2011, 32(7): 074004. [13] Lu Jingxue, Huang Fengyi, Wang Zhigong, Wu Wengang. Refinement of an Analytical Approximation of the Surface Potential in MOSFETs. J. Semicond., 2006, 27(7): 1155. [14] Xu Wenjie, Sun Lingling, Liu Jun, Li Wenjun, Zhang Haipeng, Wu Yanming, He Jia. A Continuous and Analytical Surface Potential Model for SOI LDMOS. J. Semicond., 2007, 28(11): 1712. [15] Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Cinan Wu, Jiang Yan. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs. J. Semicond., 2015, 36(4): 046001. [16] Changyong Zheng, Wei Zhang, Tailong Xu, Yuehua Dai, Junning Chen. A compact model for single material double work function gate MOSFET. J. Semicond., 2013, 34(9): 094006. [17] Jie Wang, Lingling Sun, Jun Liu, Mingzhu Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT. J. Semicond., 2013, 34(9): 094002. [18] Deng Wanling, Zheng Xueren, Chen Rongsheng. A New Poly-Si TFTs DC Model for Device Characterization and Circuit Simulation. J. Semicond., 2007, 28(12): 1916. [19] Sah Chih-Tang, Jie Binbin. The Theory of Field-Effect Transistors: XI.The Bipolar Electrochemical Currents (1-2-MOS-Gates on Thin-Thick Pure-Impure Base). J. Semicond., 2008, 29(3): 397. [20] Jie Binbin, Sah Chih-Tang. The Theory of Field-Effect Transistors XII.The Bipolar Drift and Diffusion Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base). J. Semicond., 2008, 29(7): 1227.

## GET CITATION

C Usha, P Vimala, A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure[J]. J. Semicond., 2019, 40(12): 122901. doi: 10.1088/1674-4926/40/12/122901.

Export: BibTex EndNote

## Article Metrics

Article views: 1289 Times PDF downloads: 22 Times Cited by: 0 Times

## History

Manuscript received: 07 February 2019 Manuscript revised: 15 May 2019 Online: Accepted Manuscript: 13 August 2019 Uncorrected proof: 06 September 2019 Published: 09 December 2019