J. Semicond. > Volume 40 > Issue 5 > Article Number: 052801

Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs

Chen Xu , Changda Zheng , , Xiaoming Wu , Shuan Pan , Xingan Jiang , Junlin Liu and Fengyi Jiang

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Abstract: The impact of the V-pits covering layer (VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes (LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells (QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to n-type layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.

Key words: green light-emitting diodesV-pits covering layerhole injection efficiencyoperating voltage

Abstract: The impact of the V-pits covering layer (VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes (LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells (QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to n-type layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.

Key words: green light-emitting diodesV-pits covering layerhole injection efficiencyoperating voltage



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[1]

Deng G, Zhang Y, Yu Y, et al. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer. Superlattices Microstruct, 2018, 122, 74

[2]

Yan L, Zhang Y, Han X, et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2018, 112(18), 182104

[3]

Deng G, Zhang Y, Yu Y, et al. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio. Appl Phys Lett, 2018, 112(15), 151607

[4]

Deng G, Zhang Y, Yu Y, et al. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate. Superlattices Microstruct, 2018, 116, 1

[5]

Junlin L, Jianli Z, Guangxu W, et al. Status of GaN-based green light-emitting diodes. Chin Phys B, 2015, 24(6), 39

[6]

Crawford M H. LEDs for solid-state lighting: performance challenges and recent advances. IEEE J Sel Top Quantum Electron, 2009, 15(4), 1028

[7]

Piprek J. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions. Appl Phys Lett, 2014, 104(5), 2217

[8]

Hangleiter A, Hitzel F, Netzel C, et al. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys Rev Lett, 2005, 95(12), 127402

[9]

Quan Z, Wang L, Zheng C, et al. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J Appl Phys, 2014, 116(18), A779

[10]

Li Y, Yun F, Su X, et al. Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes. J Appl Phys, 2014, 116(12), 253512

[11]

Zhou S, Liu X. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes. Phys Status Solidi Appl Res, 2016, 214(5), 1770125

[12]

Takahashi H, Ito A, Tanaka T, et al. Effect of intentionally formed `V-defects' on the emission efficiency of GaInN single. Jpn Soc Appl Phys, 2000, 39, 569

[13]

Ting S M, Ramer J C, Florescu D I, et al. Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. J Appl Phys, 2003, 94(3), 1461

[14]

Le L C, Zhao D G, Jiang D S, et al. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness. J Appl Phys, 2013, 114(14), 143706

[15]

Lv Q, Liu J, Mo C, et al. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport. ACS Photonics, 2018, 6(1), 130

[16]

Wang G, Tao X, Liu J, et al. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures. Semicond Sci Technol, 2014, 30(1), 15018

[17]

Wu X, Liu J, Quan Z, et al. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl Phys Lett, 2014, 104(22), 1634

[18]

Kim J, Tak Y, Kim J, et al. Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate. J Appl Phys, 2013, 114(1), 231107

[19]

Kozodoy P, Xing H, Denbaars S P, et al. Heavy doping effects in Mg-doped GaN. J Appl Phys, 2000, 87(4), 1832

[20]

Xiaoming W. Study on the luminescence properties of V-pits-containing GaN based blue LEDs on Si substrates. Nanchang University, 2014

[21]

Schubert E F, Gessmann T. Light emitting diodes. Encylopedia of Condensed Matter Physics, 2005, 102

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C Xu, C D Zheng, X M Wu, S Pan, X G Jiang, J L Liu, F Y Jiang, Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs[J]. J. Semicond., 2019, 40(5): 052801. doi: 10.1088/1674-4926/40/5/052801.

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Manuscript received: 11 December 2018 Manuscript revised: 26 February 2019 Online: Uncorrected proof: 12 April 2019 Accepted Manuscript: 08 May 2019 Published: 08 May 2019

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