J. Semicond. > Volume 40 > Issue 6 > Article Number: 060402

Room-temperature stable two-dimensional ferroelectric materials

Lun Dai ,

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Abstract:

Abstract:





References:

[1]

Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174

[2]

Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464

[3]

Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596

[4]

Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601

[5]

Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508

[6]

Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885

[7]

Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182

[8]

Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24

[1]

Birol T. Stable and switchable polarization in 2D. Nature, 2018, 560, 174

[2]

Hoffmann M, Fengler F P G, Herzig M, et al. Unveiling the double-well energy landscape in a ferroelectric layer. Nature, 2019, 565, 464

[3]

Ding W, Zhu J, Wang Z, et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2–VI3 van der Waals materials. Nat Commun, 2017, 8, 14596

[4]

Xiao J, Zhu H, Wang Y, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys Rev Lett, 2018, 120, 227601

[5]

Zhou Y, Wu D, Zhu Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett, 2017, 17, 5508

[6]

Wan S, Li Y, Li W, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale, 2018, 10, 14885

[7]

Khan A I, Chatterjee K, Wang N, et al. Negative capacitance in a ferroelectric capacitor. Nat Mater, 2015, 14, 182

[8]

Si M, Su C, Jiang C, et al. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat Nano, 2018, 13, 24

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L Dai, Room-temperature stable two-dimensional ferroelectric materials[J]. J. Semicond., 2019, 40(6): 060402. doi: 10.1088/1674-4926/40/6/060402.

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History

Manuscript received: Manuscript revised: Online: Accepted Manuscript: 29 May 2019 Uncorrected proof: 31 May 2019 Published: 05 June 2019

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