J. Semicond. > Volume 41 > Issue 12 > Article Number: 122801

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Rui Zhou 1, , Cui Yu 1, 2, , Chuangjie Zhou 1, 2, , Jianchao Guo 1, 2, , Zezhao He 1, 2, , Yanfeng Wang 3, , Feng Qiu 3, , Hongxing Wang 3, , Shujun Cai 1, , and Zhihong Feng 1, 2, ,

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Abstract: In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed IV characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.

Key words: diamondtransistortrapdefectpower density

Abstract: In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed IV characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.

Key words: diamondtransistortrapdefectpower density



References:

[1]

Wort C J H, Balmer R S. Diamond as an electronic material. Mater Today, 2008, 11(1/2), 22

[2]

Hirama K, Sato H, Harada Y, et al. Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation. IEEE Electron Device Lett, 2012, 33(8), 1111

[3]

Ueda K, Kasu M, Yamauchi Y, et al. Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz. IEEE Electron Device Lett, 2006, 27(7), 570

[4]

Imanishi S, Horikawa K, Oi N, et al. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett, 2018, 40(2), 279

[5]

Yu C, Zhou C J, Guo J C, et al. RF performance of hydrogenated single crystal diamond MOSFETs. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019

[6]

Camarchia V, Cappelluti F, Ghione G, et al. An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014

[7]

Wang J J, He Z Z, Yu C, et al. Comparison of field-effect transistors on polycrystalline and single-crystal diamonds. Diamond Relat Mater, 2016, 70, 114

[8]

Koizumi S, Umezawa H, Pernot J, et al. Power electronics device applications of diamond semiconductors. Woodhead Publishing Series in Electronic and Optical Materials, 2018

[9]

Woltera S D, Praterb J T, Sitara Z. Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame. J Cryst Growth, 2001, 226, 88

[10]

Zhou C J, Wang J J, Guo J C, et al. Radio frequency performance of hydrogenated diamond MOSFETs with alumina. Appl Phys Lett, 2019, 114, 063501

[11]

Yu C, Zhou C J, Guo J C, et al. 650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz. Electron Lett, 2020, 56(7), 334

[12]

Sato H, Kasu M. Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2. Diamond Relat Mater, 2013, 31, 47

[13]

Yamanaka S, Takeuchi D, Watanabe H, et al. Low-compensated boron-doped homoepitaxial diamond films using trimethylboron. Phys Status Solidi A, 1999, 174(1), 59

[14]

Hirama K, Tuge K, Sato S, et al. High performance p-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface. Appl Phys Express, 2010, 3(4), 044001

[15]

Russell S A O, Sharabi S, Tallaire A, et al. Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Lett, 2012, 33(10), 1471

[16]

Hirama K, Takayanagi H, Yamauchi S, et al. High-performance p-channel diamond MOSFETs with alumina gate insulator. IEDM Tech Dig, 2007, 873

[17]

Camarchia V, Cappelluti F, Ghione G, et al. RF power performance evaluation of surface channel diamond MESFETs. Solid-State Electron, 2011, 55(1), 19

[18]

Yu X X, Zhou C J, Qi C J, et al. A high frequency hydrogen-terminated diamond MISFET With fT/fmax of 70/80 GHz. IEEE Electron Device Lett, 2018, 39(9), 1373

[19]

Tasker P J, Hughes B. Importance of source and drain resistance to the maximum fT of millimeter-wave MODFETs. IEEE Electron Device Lett, 1989, 10(7), 291

[20]

Ivanov T G, Wei J, Shah P B, et al. Diamond RF transistor technology with ft = 41 GHz and fmax = 44 GHz. IEEE/MTT-S International Microwave Symposium - IMS, 2018, 1461

[1]

Wort C J H, Balmer R S. Diamond as an electronic material. Mater Today, 2008, 11(1/2), 22

[2]

Hirama K, Sato H, Harada Y, et al. Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation. IEEE Electron Device Lett, 2012, 33(8), 1111

[3]

Ueda K, Kasu M, Yamauchi Y, et al. Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz. IEEE Electron Device Lett, 2006, 27(7), 570

[4]

Imanishi S, Horikawa K, Oi N, et al. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett, 2018, 40(2), 279

[5]

Yu C, Zhou C J, Guo J C, et al. RF performance of hydrogenated single crystal diamond MOSFETs. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019

[6]

Camarchia V, Cappelluti F, Ghione G, et al. An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014

[7]

Wang J J, He Z Z, Yu C, et al. Comparison of field-effect transistors on polycrystalline and single-crystal diamonds. Diamond Relat Mater, 2016, 70, 114

[8]

Koizumi S, Umezawa H, Pernot J, et al. Power electronics device applications of diamond semiconductors. Woodhead Publishing Series in Electronic and Optical Materials, 2018

[9]

Woltera S D, Praterb J T, Sitara Z. Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame. J Cryst Growth, 2001, 226, 88

[10]

Zhou C J, Wang J J, Guo J C, et al. Radio frequency performance of hydrogenated diamond MOSFETs with alumina. Appl Phys Lett, 2019, 114, 063501

[11]

Yu C, Zhou C J, Guo J C, et al. 650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz. Electron Lett, 2020, 56(7), 334

[12]

Sato H, Kasu M. Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2. Diamond Relat Mater, 2013, 31, 47

[13]

Yamanaka S, Takeuchi D, Watanabe H, et al. Low-compensated boron-doped homoepitaxial diamond films using trimethylboron. Phys Status Solidi A, 1999, 174(1), 59

[14]

Hirama K, Tuge K, Sato S, et al. High performance p-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface. Appl Phys Express, 2010, 3(4), 044001

[15]

Russell S A O, Sharabi S, Tallaire A, et al. Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Lett, 2012, 33(10), 1471

[16]

Hirama K, Takayanagi H, Yamauchi S, et al. High-performance p-channel diamond MOSFETs with alumina gate insulator. IEDM Tech Dig, 2007, 873

[17]

Camarchia V, Cappelluti F, Ghione G, et al. RF power performance evaluation of surface channel diamond MESFETs. Solid-State Electron, 2011, 55(1), 19

[18]

Yu X X, Zhou C J, Qi C J, et al. A high frequency hydrogen-terminated diamond MISFET With fT/fmax of 70/80 GHz. IEEE Electron Device Lett, 2018, 39(9), 1373

[19]

Tasker P J, Hughes B. Importance of source and drain resistance to the maximum fT of millimeter-wave MODFETs. IEEE Electron Device Lett, 1989, 10(7), 291

[20]

Ivanov T G, Wei J, Shah P B, et al. Diamond RF transistor technology with ft = 41 GHz and fmax = 44 GHz. IEEE/MTT-S International Microwave Symposium - IMS, 2018, 1461

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R Zhou, C Yu, C J Zhou, J C Guo, Z Z He, Y F Wang, F Qiu, H X Wang, S J Cai, Z H Feng, Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond[J]. J. Semicond., 2020, 41(12): 122801. doi: 10.1088/1674-4926/41/12/122801.

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History

Manuscript received: 03 April 2020 Manuscript revised: 28 April 2020 Online: Accepted Manuscript: 28 July 2020 Uncorrected proof: 31 July 2020 Published: 08 December 2020

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