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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Qiang Liu, Qian Wang, Hao Liu, Chenxi Fei, Shiyan Li, Runhua Huang and Song Bai

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 Corresponding author: Qiang Liu, Email: liuqiangphy@126.com

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Abstract: A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm2 and breakdown voltage exceeding 1.5 kV is designed and fabricated. Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region. Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance. The typical leakage current is less than 1 μA at VDS = 1.4 kV. Drain–source current reaches 50 A at VDS = 0.75 V and VGS = 20 V corresponding to an on-resistance of 15 mΩ. The typical gate threshold voltage is 2.6 V.

Key words: 4H-SiCelectric field strengthfloating guard ringspecific on-resistance



[1]
Kimoto T. Material science and device physics in SiC technology for high-voltage power devices. Jpn J Appl Phys, 2015, 54, 4 doi: 10.7567/jjap.54.040103
[2]
Lichtenwalner D J, Hull B, Pala V, et al. Performance and reliability of SiC power MOSFETs. MRS Adv, 2016, 1, 2 doi: 10.1557/adv.2015.57
[3]
Castellazzi A, Fayyaz A, Romano G, et al. SiC power MOSFETs performance, robustness and technology maturity. Microelectron Reliab, 2016, 58, 58 doi: 10.1016/j.microrel.2015.11.025
[4]
Jiang F, Sheng K, Guo Q, et al. Comparative study of temperature-dependent characteristics for SiC MOSFETs. China International Forum on Solid State Lighting, 2016, 50
[5]
Zhou W, Guo Q, Wu X, et al. A 1200 V/100 A all-SiC power module for boost converter of EV/HEV’s motor driver application. China International Forum on Solid State Lighting, 2016, 38
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[7]
[8]
[9]
[10]
Iwata H, Itoh K M. Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC. J Appl Phys, 2001, 89, 6228 doi: 10.1063/1.1366660
[11]
Chung G Y, Tin C C, Williams J R, et al. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Lett, 2001, 22, 176 doi: 10.1109/55.915604
[12]
Moghadam H A, Dimitrijev S, Han J, et al. Active defects in MOS devices on 4H-SiC: A critical review. Microelectron Reliab, 2016, 60, 60 doi: 10.1016/j.microrel.2016.02.006
[13]
Ohashi T, Nakabayashi Y, Shimizu T, et al. Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs. Jpn J Appl Phys, 2017, 56, 10 doi: 10.7567/JJAP.56.106502
[14]
Fujita E, Sometani M, Hatakeyama T, et al. Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements. AIP Adv, 2018, 8, 8 doi: 10.1063/1.5034048
[15]
Fiorenza P, Swanson L K, Vivona M, et al. Characterization of SiO2/SiC interfaces annealed in N2O or POCl3. Materials Science Forum, 2014, 623
[16]
Rong H, Sharma Y K, Mawby P A, et al. Combined N2O and phosphorus passivations for the 4H-SiC/SiO2 interface with oxide grown at 1400 °C. Materials Science Forum, 2016, 344
[17]
Lichtenwalner D J, Pala V, Hull B, et al. High-mobility SiC MOSFETs with alkaline earth interface passivation. Materials Science Forum, 2016, 671
[18]
Huang R, Liu H, Liu T, et al. Design and fabrication of 1.2 kV/40 mΩ 4H-SiC MOSFET. China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, 2018
Fig. 1.  (Color online) Theoretical breakdown voltages of epi-layers with various thickness and doping concentration.

Fig. 2.  (Color online) (a) Modeled FGR type edge termination structure. (b) E-field strength profiles comparison between P-well doped and P+ doped FGR type edge termination. Both data are extracted under breakdown statuses of the two terminations, respectively. Upper one corresponds to E-field at the depth of p–n junction and bottom one corresponds to E-field near the surface of the edge termination.

Fig. 3.  Breakdown voltages of FGR with different spacing arrays.

Fig. 4.  (Color online) (a) Specific on-resistance with and without additional JFET doping. (b) Electric field strength in gate oxide and specific on-resistance dependence on JFET width.

Fig. 5.  (Color online) Doping regions of designed SiC MOSFET including P-well, N+, P+, and JFET regions.

Fig. 6.  (Color online) Photo of fabricated 1.2 kV / 15 mΩ devices.

Fig. 7.  (Color online) Breakdown voltages of PiN diodes with different FGR spacing arrays.

Fig. 8.  (Color online) Current–voltage curves of various gate voltages.

Fig. 9.  (Color online) Drain–source leakage current at VGS = 0 V. The dashed red line represents VDS = 1.5 kV.

[1]
Kimoto T. Material science and device physics in SiC technology for high-voltage power devices. Jpn J Appl Phys, 2015, 54, 4 doi: 10.7567/jjap.54.040103
[2]
Lichtenwalner D J, Hull B, Pala V, et al. Performance and reliability of SiC power MOSFETs. MRS Adv, 2016, 1, 2 doi: 10.1557/adv.2015.57
[3]
Castellazzi A, Fayyaz A, Romano G, et al. SiC power MOSFETs performance, robustness and technology maturity. Microelectron Reliab, 2016, 58, 58 doi: 10.1016/j.microrel.2015.11.025
[4]
Jiang F, Sheng K, Guo Q, et al. Comparative study of temperature-dependent characteristics for SiC MOSFETs. China International Forum on Solid State Lighting, 2016, 50
[5]
Zhou W, Guo Q, Wu X, et al. A 1200 V/100 A all-SiC power module for boost converter of EV/HEV’s motor driver application. China International Forum on Solid State Lighting, 2016, 38
[6]
[7]
[8]
[9]
[10]
Iwata H, Itoh K M. Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC. J Appl Phys, 2001, 89, 6228 doi: 10.1063/1.1366660
[11]
Chung G Y, Tin C C, Williams J R, et al. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Lett, 2001, 22, 176 doi: 10.1109/55.915604
[12]
Moghadam H A, Dimitrijev S, Han J, et al. Active defects in MOS devices on 4H-SiC: A critical review. Microelectron Reliab, 2016, 60, 60 doi: 10.1016/j.microrel.2016.02.006
[13]
Ohashi T, Nakabayashi Y, Shimizu T, et al. Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs. Jpn J Appl Phys, 2017, 56, 10 doi: 10.7567/JJAP.56.106502
[14]
Fujita E, Sometani M, Hatakeyama T, et al. Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements. AIP Adv, 2018, 8, 8 doi: 10.1063/1.5034048
[15]
Fiorenza P, Swanson L K, Vivona M, et al. Characterization of SiO2/SiC interfaces annealed in N2O or POCl3. Materials Science Forum, 2014, 623
[16]
Rong H, Sharma Y K, Mawby P A, et al. Combined N2O and phosphorus passivations for the 4H-SiC/SiO2 interface with oxide grown at 1400 °C. Materials Science Forum, 2016, 344
[17]
Lichtenwalner D J, Pala V, Hull B, et al. High-mobility SiC MOSFETs with alkaline earth interface passivation. Materials Science Forum, 2016, 671
[18]
Huang R, Liu H, Liu T, et al. Design and fabrication of 1.2 kV/40 mΩ 4H-SiC MOSFET. China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, 2018
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    Received: 04 July 2019 Revised: 20 January 2020 Online: Accepted Manuscript: 26 March 2020Uncorrected proof: 30 March 2020Published: 01 June 2020

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      Qiang Liu, Qian Wang, Hao Liu, Chenxi Fei, Shiyan Li, Runhua Huang, Song Bai. Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. Journal of Semiconductors, 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801 Q Liu, Q Wang, H Liu, C X Fei, S Y Li, R H Huang, S Bai, Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. J. Semicond., 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801.Export: BibTex EndNote
      Citation:
      Qiang Liu, Qian Wang, Hao Liu, Chenxi Fei, Shiyan Li, Runhua Huang, Song Bai. Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. Journal of Semiconductors, 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801

      Q Liu, Q Wang, H Liu, C X Fei, S Y Li, R H Huang, S Bai, Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2[J]. J. Semicond., 2020, 41(6): 062801. doi: 10.1088/1674-4926/41/6/062801.
      Export: BibTex EndNote

      Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

      doi: 10.1088/1674-4926/41/6/062801
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      • Corresponding author: Email: liuqiangphy@126.com
      • Received Date: 2019-07-04
      • Revised Date: 2020-01-20
      • Published Date: 2020-06-01

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