J. Semicond. > Volume 41 > Issue 8 > Article Number: 080402

A new single-element layered two-dimensional semiconductor: black arsenic

Mianzeng Zhong and Jun He ,

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References:

[1]

Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5, 487

[2]

Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372

[3]

Island J O, Steele G A, van der Zant H S, et al. Environmental instability of few-layer black phosphorus. 2D Mater, 2015, 2, 011002

[4]

Chen Y, Chen C, Kealhofer R, et al. Black arsenic: a layered semiconductor with extreme in-plane anisotropy. Adv Mater, 2018, 30, 1800754

[5]

Zhong M, Xia Q, Pan L, et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv Funct Mater, 2018, 28, 1802581

[6]

Zhang S, Yan Z, Li Y, et al. Atomically thin arsenene and antimonene: semimetal–semiconductor and indirect–direct band-gap transitions. Angew Chem Int Ed, 2015, 54, 3112

[7]

Kou L, Ma Y, Tan X, et al. Structural and electronic properties of layered arsenic and antimony arsenide. J Phys Chem C, 2015, 119, 6918

[8]

Kamal C, Ezawa M. Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems. Phys Rev B, 2015, 91, 085423

[9]

Luo K, Chen S, Duan C. Indirect-direct band gap transition of two-dimensional arsenic layered semiconductors — cousins of black phosphorus. Sci China Phys, Mechan Astron, 2015, 58, 1

[10]

Wang C, Xia Q, Nie Y, et al. Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene. AIP Adv, 2016, 6, 035204

[11]

Zhang Z, Xie J, Yang D, et al. Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene. Appl Phys Express, 2015, 8, 055201

[12]

Tsai H S, Wang S W, Hsiao C H, et al. Direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. Chem Mater, 2016, 28, 425

[1]

Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5, 487

[2]

Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372

[3]

Island J O, Steele G A, van der Zant H S, et al. Environmental instability of few-layer black phosphorus. 2D Mater, 2015, 2, 011002

[4]

Chen Y, Chen C, Kealhofer R, et al. Black arsenic: a layered semiconductor with extreme in-plane anisotropy. Adv Mater, 2018, 30, 1800754

[5]

Zhong M, Xia Q, Pan L, et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv Funct Mater, 2018, 28, 1802581

[6]

Zhang S, Yan Z, Li Y, et al. Atomically thin arsenene and antimonene: semimetal–semiconductor and indirect–direct band-gap transitions. Angew Chem Int Ed, 2015, 54, 3112

[7]

Kou L, Ma Y, Tan X, et al. Structural and electronic properties of layered arsenic and antimony arsenide. J Phys Chem C, 2015, 119, 6918

[8]

Kamal C, Ezawa M. Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems. Phys Rev B, 2015, 91, 085423

[9]

Luo K, Chen S, Duan C. Indirect-direct band gap transition of two-dimensional arsenic layered semiconductors — cousins of black phosphorus. Sci China Phys, Mechan Astron, 2015, 58, 1

[10]

Wang C, Xia Q, Nie Y, et al. Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene. AIP Adv, 2016, 6, 035204

[11]

Zhang Z, Xie J, Yang D, et al. Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene. Appl Phys Express, 2015, 8, 055201

[12]

Tsai H S, Wang S W, Hsiao C H, et al. Direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. Chem Mater, 2016, 28, 425

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M Z Zhong, J He, A new single-element layered two-dimensional semiconductor: black arsenic[J]. J. Semicond., 2020, 41(8): 080402. doi: 10.1088/1674-4926/41/8/080402.

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Manuscript received: Manuscript revised: Online: Accepted Manuscript: 02 June 2020 Uncorrected proof: 08 June 2020 Published: 04 August 2020

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