J. Semicond. > Volume 41 > Issue 8 > Article Number: 082004

Photo-induced doping effect and dynamic process in monolayer MoSe2

Qian Yang 1, 2, , Yongzhou Xue 1, 2, , Hao Chen 1, 2, , Xiuming Dou 1, 2, , and Baoquan Sun 1, 2, ,

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Abstract: Dynamic processes of electron transfer by optical doping in monolayer MoSe2 at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of tα with α = 0.1–0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 μW. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.

Key words: photodopingmonolayer MoSe2dynamic processtemperature

Abstract: Dynamic processes of electron transfer by optical doping in monolayer MoSe2 at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of tα with α = 0.1–0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 μW. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.

Key words: photodopingmonolayer MoSe2dynamic processtemperature



References:

[1]

Salehzadeh O, Djavid M, Tran N H, et al. Optically pumped two-dimensional MoS2 lasers operating at room-temperature. Nano Lett, 2015, 15, 5302

[2]

Ye Y, Wong Z J, Lu X F, et al. Monolayer excitonic laser. Nat Photon, 2015, 9, 733

[3]

Wu S, Buckley S, Schaibley J R, et al. Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature, 2015, 520, 69

[4]

Pospischil A, Furchi M M, Mueller T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat Nanotechnol, 2014, 9, 257

[5]

Withers F, del Pozo-Zamudio O, Mishchenko A, et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat Mater, 2015, 14, 301

[6]

Koperski M, Nogajewski K, Arora A, et al. Single photon emitters in exfoliated WSe2 structures. Nat Nanotechnol, 2015, 10, 503

[7]

He Y M, Clark G, Schaibley J R, et al. Single quantum emitters in monolayer semiconductors. Nat Nanotechnol, 2015, 10, 497

[8]

Roldán R, Silva-Guillén J A, López-Sancho M P, et al. Electronic properties of single-layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se). Ann Der Physik, 2014, 526, 347

[9]

Currie M, Hanbicki A T, Kioseoglou G, et al. Optical control of charged exciton states in tungsten disulfide. Appl Phys Lett, 2015, 106, 201907

[10]

Singh A, Moody G, Tran K, et al. Trion formation dynamics in monolayer transition metal dichalcogenides. Phys Rev B, 2016, 93, 041401

[11]

Godde T, Schmidt D, Schmutzler J, et al. Exciton and trion dynamics in atomically thin MoSe2 and WSe2: Effect of localization. Phys Rev B, 2016, 94, 165301

[12]

Liu T, Xiang D, Zheng Y, et al. Nonvolatile and programmable photodoping in MoTe2 for photoresist-free complementary electronic devices. Adv Mater, 2018, 30, 1804470

[13]

Quereda J, Ghiasi T S, van der Wal C H, et al. Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors. 2D Mater, 2019, 6, 025040

[14]

Ross J S, Wu S F, Yu H Y, et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun, 2013, 4, 1474

[15]

Cadiz F, Robert C, Wang G, et al. Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides. 2D Mater, 2016, 3, 045008

[16]

Atkin P, Lau D M, Zhang Q, et al. Laser exposure induced alteration of WS2 monolayers in the presence of ambient moisture. 2D Mater, 2017, 5, 015013

[17]

Liu Z, Amani M, Najmaei S, et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat Commun, 2014, 5, 5246

[18]

Fu X, Li F, Lin J F, et al. Pressure-dependent light emission of charged and neutral excitons in monolayer MoSe2. J Phys Chem Lett, 2017, 8, 3556

[19]

Pei J, Yang J, Wang X, et al. Excited state biexcitons in atomically thin MoSe2. ACS Nano, 2017, 11, 7468

[20]

Lundt N, Cherotchenko E, Iff O, et al. The interplay between excitons and trions in a monolayer of MoSe2. Appl Phys Lett, 2018, 112, 031107

[21]

Pelant I, Valenta J. Luminescence spectroscopy of semiconductors. London: Oxford University Press, 2012

[22]

Scher H, Montroll E W. Anomalous transit-time dispersion in amorphous solids. Phys Rev B, 1975, 12, 2455

[23]

Kakalios J, Street R A, Jackson W B. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. Phys Rev Lett, 1987, 59, 1037

[1]

Salehzadeh O, Djavid M, Tran N H, et al. Optically pumped two-dimensional MoS2 lasers operating at room-temperature. Nano Lett, 2015, 15, 5302

[2]

Ye Y, Wong Z J, Lu X F, et al. Monolayer excitonic laser. Nat Photon, 2015, 9, 733

[3]

Wu S, Buckley S, Schaibley J R, et al. Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature, 2015, 520, 69

[4]

Pospischil A, Furchi M M, Mueller T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat Nanotechnol, 2014, 9, 257

[5]

Withers F, del Pozo-Zamudio O, Mishchenko A, et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat Mater, 2015, 14, 301

[6]

Koperski M, Nogajewski K, Arora A, et al. Single photon emitters in exfoliated WSe2 structures. Nat Nanotechnol, 2015, 10, 503

[7]

He Y M, Clark G, Schaibley J R, et al. Single quantum emitters in monolayer semiconductors. Nat Nanotechnol, 2015, 10, 497

[8]

Roldán R, Silva-Guillén J A, López-Sancho M P, et al. Electronic properties of single-layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se). Ann Der Physik, 2014, 526, 347

[9]

Currie M, Hanbicki A T, Kioseoglou G, et al. Optical control of charged exciton states in tungsten disulfide. Appl Phys Lett, 2015, 106, 201907

[10]

Singh A, Moody G, Tran K, et al. Trion formation dynamics in monolayer transition metal dichalcogenides. Phys Rev B, 2016, 93, 041401

[11]

Godde T, Schmidt D, Schmutzler J, et al. Exciton and trion dynamics in atomically thin MoSe2 and WSe2: Effect of localization. Phys Rev B, 2016, 94, 165301

[12]

Liu T, Xiang D, Zheng Y, et al. Nonvolatile and programmable photodoping in MoTe2 for photoresist-free complementary electronic devices. Adv Mater, 2018, 30, 1804470

[13]

Quereda J, Ghiasi T S, van der Wal C H, et al. Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors. 2D Mater, 2019, 6, 025040

[14]

Ross J S, Wu S F, Yu H Y, et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun, 2013, 4, 1474

[15]

Cadiz F, Robert C, Wang G, et al. Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides. 2D Mater, 2016, 3, 045008

[16]

Atkin P, Lau D M, Zhang Q, et al. Laser exposure induced alteration of WS2 monolayers in the presence of ambient moisture. 2D Mater, 2017, 5, 015013

[17]

Liu Z, Amani M, Najmaei S, et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat Commun, 2014, 5, 5246

[18]

Fu X, Li F, Lin J F, et al. Pressure-dependent light emission of charged and neutral excitons in monolayer MoSe2. J Phys Chem Lett, 2017, 8, 3556

[19]

Pei J, Yang J, Wang X, et al. Excited state biexcitons in atomically thin MoSe2. ACS Nano, 2017, 11, 7468

[20]

Lundt N, Cherotchenko E, Iff O, et al. The interplay between excitons and trions in a monolayer of MoSe2. Appl Phys Lett, 2018, 112, 031107

[21]

Pelant I, Valenta J. Luminescence spectroscopy of semiconductors. London: Oxford University Press, 2012

[22]

Scher H, Montroll E W. Anomalous transit-time dispersion in amorphous solids. Phys Rev B, 1975, 12, 2455

[23]

Kakalios J, Street R A, Jackson W B. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. Phys Rev Lett, 1987, 59, 1037

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Q Yang, Y Z Xue, H Chen, X M Dou, B Q Sun, Photo-induced doping effect and dynamic process in monolayer MoSe2[J]. J. Semicond., 2020, 41(8): 082004. doi: 10.1088/1674-4926/41/8/082004.

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Manuscript received: 02 July 2020 Manuscript revised: 04 July 2020 Online: Accepted Manuscript: 13 July 2020 Uncorrected proof: 20 July 2020 Published: 04 August 2020

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