J. Semicond. > 2021, Volume 42 > Issue 1 > Article Number: 013101

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Andrey S. Sokolov 1, , , Haider Abbas 1, , , Yawar Abbas 2, and Changhwan Choi 1, ,

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  • Corresponding author: Changhwan Choi, e-mail: cchoi@hanyang.ac.kr
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    Abstract: Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements of volatile memory, nonvolatile memory, and neuromorphic characteristics. Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials, such as biological materials, perovskites, 2D materials, and transition metal oxides. In this review, we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms. We then discuss emergent memory technologies using memristors, together with its potential neuromorphic applications, by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices, in areas such as ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), and paired-pulse facilitation (PPF), among others. The emulation of essential biological synaptic functions realized in various switching materials, including inorganic metal oxides and new organic materials, as well as diverse device structures such as single-layer and multilayer hetero-structured devices, and crossbar arrays, is analyzed in detail. Finally, we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.

    Key words: RRAMmemristoremerging memoriesneuromorphic computingelectronic synapseresistive switchingmemristor engineering



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    A S Sokolov, H Abbas, Y Abbas, C Choi, Towards engineering in memristors for emerging memory and neuromorphic computing: A review[J]. J. Semicond., 2021, 42(1): 013101. doi: 10.1088/1674-4926/42/1/013101.

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    Manuscript received: 31 July 2020 Manuscript revised: 11 September 2020 Online: Accepted Manuscript: 19 October 2020 Uncorrected proof: 08 January 2021 Published: 09 January 2021

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