J. Semicond. > 2021, Volume 42 > Issue 1 > Article Number: 013102

A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang 1, , Chen Luo 1, , Xiyue Tian 1, , Fang Liang 1, , Yin Xia 1, , Xinqian Chen 1, , Chaolun Wang 1, , Steve Xin Liang 2, , Xing Wu 1, , and Junhao Chu 1,

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  • Corresponding author: Xing Wu, Email: xwu@cee.ecnu.edu.cn
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    Abstract: Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism and packaging reliability issues in NVMs are of great research interest. The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle. Transmission electron microscopy (TEM) with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology, structures and chemical compositions at atomic scale. The various external stimuli, such as thermal, electrical, mechanical, optical and magnetic fields, provide a platform to probe and engineer NVM devices inside TEM in real-time. Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution. This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package. In this review, the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced, with intermetallic compounds forming and degradation process investigated. The principles and challenges of TEM technology on NVM device study are also discussed.

    Key words: memorytransmission electron microscopyin situ characterizationpackagereliability



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    X Yang, C Luo, X Y Tian, F Liang, Y Xia, X Q Chen, C L Wang, S X Liang, X Wu, J H Chu, A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory[J]. J. Semicond., 2021, 42(1): 013102. doi: 10.1088/1674-4926/42/1/013102.

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    Manuscript received: 26 April 2020 Manuscript revised: 04 August 2020 Online: Accepted Manuscript: 21 September 2020 Uncorrected proof: 08 January 2021 Published: 09 January 2021

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