J. Semicond. > 2021, Volume 42 > Issue 1 > Article Number: 013103

Electrolyte-gated transistors for neuromorphic applications

Heyi Huang 1, 2, , Chen Ge 1, 2, , , Zhuohui Liu 1, 2, , Hai Zhong 1, , Erjia Guo 1, 2, , Meng He 1, , Can Wang 1, 2, 3, , Guozhen Yang 1, and Kuijuan Jin 1, 2, 3, ,

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  • Corresponding author: Chen Ge, gechen@iphy.ac.cn; Kuijuan Jin, kjjin@iphy.ac.cn
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    Abstract: Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck. To enhance computing performance, neuromorphic computing systems that can simulate the function of the human brain are being developed. Artificial synapses are essential electronic devices for neuromorphic architectures, which have the ability to perform signal processing and storage between neighboring artificial neurons. In recent years, electrolyte-gated transistors (EGTs) have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications. Among the various electronic devices, EGT-based artificial synapses offer the benefits of good stability, ultra-high linearity and repeated cyclic symmetry, and can be constructed from a variety of materials. They also spatially separate “read” and “write” operations. In this article, we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications. We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses. Then, we review different types of channels and electrolyte materials for EGT-based artificial synapses. Finally, we review the potential applications in biological functions.

    Key words: electrolyte-gated transistorsneuromorphic comuptingartificial synapses



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    [4]

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    [9]

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    [16]

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    [17]

    Chanthbouala A, Garcia V, Cherifi R O, et al. A ferroelectric memristor. Nat Mater, 2012, 11(10), 860

    [18]

    Li J, Li N, Ge C, et al. Giant electroresistance in ferroionic tunnel junctions. iScience, 2019, 16, 368

    [19]

    Li J, Ge C, Du J, et al. Reproducible ultrathin ferroelectric domain switching for high-performance neuromorphic computing. Adv Mater, 2020, 32(7), e1905764

    [20]

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    [21]

    Shi J, Ha S D, Zhou Y, et al. A correlated nickelate synaptic transistor. Nat Commun, 2013, 4, 2676

    [22]

    Kim S H, Hong K, Xie W, et al. Electrolyte-gated transistors for organic and printed electronics. Adv Mater, 2013, 25(13), 1822

    [23]

    Dhoot A S, Israel C, Moya X, et al. Large electric field effect in electrolyte-gated manganites. Phys Rev Lett, 2009, 102, 136402

    [24]

    Kim M K, Lee J S. Ferroelectric analog synaptic transistors. Nano Lett, 2019, 19(3), 2044

    [25]

    Wan C, Xiao K, Angelin A, et al. The rise of bioinspired ionotronics. Adv Intell Syst, 2019, 1(7), 1900073

    [26]

    Kim S, Yoon J, Kim H D. Carbon nanotube synaptic transistor network for pattern recognition. ACS Appl Mater Interfaces, 2015, 7, 45, 25479

    [27]

    Bisri S Z, Shimizu S, Nakano M, et al. Endeavor of iontronics: From fundamentals to applications of ion-controlled electronics. Adv Mater, 2017, 29(25), 1607054

    [28]

    Yuan H, Shimotani H, Tsukazaki A, et al. Hydrogenation-induced surface polarity recognition and proton memory behavior at protic-ionic-liquid/oxide electric-double-layer interfaces. J Am Chem Soc, 2010, 132, 6672

    [29]

    Yang J T, Ge C, Du J Y, et al. Artificial synapses emulated by an electrolyte-gated tungsten-oxide transistor. Adv Mater, 2018, 30(34), 1801548

    [30]

    Sharbati M T, Du Y, Torres J, et al. Low-power, electrochemically tunable graphene synapses for neuromorphic computing. Adv Mater, 2018, 30(36), 1802353

    [31]

    Ge C, Liu C, Zhou Q, et al. A ferrite synaptic transistor with topotactic transformation. Adv Mater, 2019, 31(19), 1900379

    [32]

    Huang H Y, Ge C, Zhang Q H, et al. Electrolyte-gated synaptic transistor with oxygen ions. Adv Funct Mater, 2019, 29(29), 1902702

    [33]

    Ge C, Li G, Zhou Q, et al. Gating-induced reversible H xVO2 phase transformations for neuromorphic computing. Nano Energy, 2020, 67, 104268

    [34]

    Ling H, Koutsouras D A, Kazemzadeh S. Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing. Appl Phys Rev, 2020, 7(1), 011307

    [35]

    Kim K, Chen C L, Truong Q. A carbon nanotube synapse with dynamic logic and learning. Adv Mater, 2013, 25, 1693

    [36]

    Feng P, Xu W, Yang Y, et al. Printed neuromorphic devices based on printed carbon nanotube thin-film transistors. Adv Funct Mater, 2017, 27(5), 1604447

    [37]

    Yao Y, Huang X, Peng S, et al. Reconfigurable artificial synapses between excitatory and inhibitory modes based on single-gate graphene transistors. Adv Electron Mater, 2019, 5(5), 1902702

    [38]

    Jiang J, Guo J, Wan X, et al. 2D MoS2 neuromorphic devices for brain-like computational systems. Small, 2017, 13(29), 1700933

    [39]

    Dai S, Wang Y, Zhang J, et al. Wood-derived nanopaper dielectrics for organic synaptic transistors. ACS Appl Mater Interfaces, 2018, 10(46), 39983

    [40]

    Xu W, Min S Y, Hwang H. Organic core-sheath nanowire artificial synapses with femtojoule energy consumption. Sci Adv, 2016, 2, e1501326

    [41]

    Pal B N, Dhar B M, See K C, et al. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors. Nat Mater, 2009, 8(11), 898

    [42]

    Lee S W, Lee H J, Choi J H, et al. Periodic array of polyelectrolyte-gated organic transistors from electrospun poly(3-hexylthiophene) nanofibers. Nano Lett, 2010, 10(1), 347

    [43]

    Herlogsson L, Noh Y Y, Zhao N, et al. Downscaling of organic field-effect transistors with a polyelectrolyte gate insulator. Adv Mater, 2008, 20(24), 4708

    [44]

    Siddons G P, Merchin D, Back J H, et al. Highly efficient gating and doping of carbon nanotubes with polymer electrolytes. Nano Lett, 2004, 4, 927

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    Said E, Crispin X, Herlogsson L, et al. Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film. Appl Phys Lett, 2006, 89(14), 143507

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    Lu W, Fadeev A G, Qi B, et al. Use of ionic liquids for π-conjugated polymer electrochemical devices. Science, 2002, 297, 983

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    H Y Huang, C Ge, Z H Liu, H Zhong, E J Guo, M He, C Wang, G Z Yang, K J Jin, Electrolyte-gated transistors for neuromorphic applications[J]. J. Semicond., 2021, 42(1): 013103. doi: 10.1088/1674-4926/42/1/013103.

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    Manuscript received: 20 August 2020 Manuscript revised: 13 October 2020 Online: Accepted Manuscript: 27 November 2020 Uncorrected proof: 08 January 2021 Published: 09 January 2021

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