Chin. J. Semicond. > 1997, Volume 18 > Issue 6 > 436-440
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P~+-Ge_xSi_(1-x)/P-Si异质结内光发射(HIP)长波长红外探测器结构的改进及其在77K下的特性

王瑞忠 , 陈培毅 , 钱佩信 , 罗广礼 , 张镭 , 郑康立 and 周均铭

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(6): 436-440
      王瑞忠, 陈培毅, 钱佩信, 罗广礼, 张镭, 郑康立, 周均铭. P~+-Ge_xSi_(1-x)/P-Si异质结内光发射(HIP)长波长红外探测器结构的改进及其在77K下的特性[J]. 半导体学报(英文版), 1997, 18(6): 436-440.
      Citation:
      王瑞忠, 陈培毅, 钱佩信, 罗广礼, 张镭, 郑康立, 周均铭. P~+-Ge_xSi_(1-x)/P-Si异质结内光发射(HIP)长波长红外探测器结构的改进及其在77K下的特性[J]. 半导体学报(英文版), 1997, 18(6): 436-440.
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      • Received Date: 2015-08-19

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