Chin. J. Semicond. > Volume 19 > Issue 11 > Article Number: 871

GaAs脊形量子线发光性质的光致发光谱研究

牛智川 , 袁之良 , 周增圻 , 徐仲英 and 王守武

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Abstract: 本文报道了用MBE非平面生长方法制备的GaAs脊形量子线发光性特实验研究.低温、微区、变温和极化光致发光谱等的测试分析表明:这种由{113}面构成的脊形量子线具有发光各向异性、激子束缚能明显大于侧面量子阱等特点.用Kronig-Penney模型进行的近似计算结果证实了脊形量子线的横向量子限制效应导致了光致发光峰位置20meV的蓝移

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 November 1998

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