Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 811-813
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掺氧非晶硅的正电子寿命研究

史志强 , 刘克源 , 王学恩 , 刘兴胜 and 杨子强

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 811-813
      史志强, 刘克源, 王学恩, 刘兴胜, 杨子强. 掺氧非晶硅的正电子寿命研究[J]. 半导体学报(英文版), 1997, 18(11): 811-813.
      Citation:
      史志强, 刘克源, 王学恩, 刘兴胜, 杨子强. 掺氧非晶硅的正电子寿命研究[J]. 半导体学报(英文版), 1997, 18(11): 811-813.
      shu

      • Received Date: 2015-08-19

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