Chin. J. Semicond. > Volume 18 > Issue 11 > Article Number: 811

掺氧非晶硅的正电子寿命研究

史志强 , 刘克源 , 王学恩 , 刘兴胜 and 杨子强

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 在室温下测量了掺氧非晶硅薄膜的正电子寿命谱.实验发现,随着掺氧量的增加,正电子寿命减小,对应的相对强度增加.据此,本文从电子密度、悬挂键和微空洞等方面讨论了氧掺杂对非晶硅薄膜微观结构的影响.

Search

Advanced Search >>

Article Metrics

Article views: 1563 Times PDF downloads: 1185 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 November 1997

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误