Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 806-810
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GaAs中由磁场引起的与Si施主有关的高亚稳态

陈张海 , 陈忠辉 , 刘普霖 , 史国良 , 胡灿明 , 石晓红 and 沈学础

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 806-810
      陈张海, 陈忠辉, 刘普霖, 史国良, 胡灿明, 石晓红, 沈学础. GaAs中由磁场引起的与Si施主有关的高亚稳态[J]. 半导体学报(英文版), 1997, 18(11): 806-810.
      Citation:
      陈张海, 陈忠辉, 刘普霖, 史国良, 胡灿明, 石晓红, 沈学础. GaAs中由磁场引起的与Si施主有关的高亚稳态[J]. 半导体学报(英文版), 1997, 18(11): 806-810.
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      • Received Date: 2015-08-19

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