Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 515

非晶态硅的带隙态密度

夏建白

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Abstract: 本文提出了一个带悬键和饱和键的Bethe格子模型,计算了非晶态硅的带隙态密度,证明了Spear实验的带隙态Ex峰是由悬键产生的,E_y峰是由饱和键产生的.还得出了:当饱和原子改变时,Ex峰保持不变,Ey峰位置随饱和原子与Si原子键的能量差而变化,能量差越小,Ey峰与Ex峰的间距越大,峰的强度也随之改变.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

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