Chin. J. Semicond. > Volume 8 > Issue 6 > Article Number: 657

MeV He~+微束用于半导体集成电路的微区分析

朱沛然 , 刘家瑞 , 张敬平 and 殷士端

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Abstract: 本文介绍了我国用于微区分析的MeV离子微探针设备及其在半导体集成电路中的应用,能量为2MeV的He~+束通过一套限束系统,然后由四单元四极磁透镜聚焦到样品表面的束直径为3μm,束流为300pA.利用该设备分析了半导体集成电路中几个不同区域的元素成份及深度分布.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1987

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