Chin. J. Semicond. > Volume 18 > Issue 9 > Article Number: 718

n型6H-SiC体材料欧姆接触的制备

张玉明 , 罗晋生 and 张义门

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Abstract: 本文报道了采用Au/NiCr在n型6H-SiC体材料上制备欧姆接触的实验结果,依次蒸发NiCr合金(重量百分比为80%Ni:20%Cr)和金层,高温退火后形成欧姆接触,用改进的四探针法测得最小比接触电阻为8.4e-5·cm2.达到了应用的要求.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 September 1997

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