Chin. J. Semicond. > Volume 18 > Issue 6 > Article Number: 408

GaAs(100)同质外延表面相变的动态过程研究

刘兴权 , 陆卫 , 马朝晖 , 陈效双 , 乔怡敏 , 万明芳 and 沈学础

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Abstract: 本文叙述了用CCD系统对MBE生长中RHEED图案强度变化进行实时监测,通过(00)级条纹的RHEED强度分析,直接给出了不同生长条件下表面相变的动态过程,得到了从C(4×4)到α(2×4)的连续相变过程,进一步给出了不同条件下的表面化学配比情况.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1997

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