Chin. J. Semicond. > Volume 13 > Issue 2 > Article Number: 90

热壁外延ZnSe/GaAs薄膜生长机理的研究

王杰 , 李喆深 , 蔡群 , 陆春明 , 沈军 and 王迅

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Abstract: 本文用四极质谱(QMS)、X射线光电子谱(XPS)、俄歇电子能谱(AES)等手段,对单一源热壁外延(HWB)ZnSe/GaAs 薄膜的生长机理作了一些研究.这些研究主要包括 ZnSe源的蒸发情况以及在不同衬底温度条件下,外延薄膜的化学配比状态.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1992

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