Chin. J. Semicond. > 1992, Volume 13 > Issue 6 > 327-332

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AlGaAs混晶中Te施主能级

康俊勇 , 黄启圣 , 林虹 , 陈朝 , 唐文国 and 李自元

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(6): 327-332
      康俊勇, 黄启圣, 林虹, 陈朝, 唐文国, 李自元. AlGaAs混晶中Te施主能级[J]. 半导体学报(英文版), 1992, 13(6): 327-332.
      Citation:
      康俊勇, 黄启圣, 林虹, 陈朝, 唐文国, 李自元. AlGaAs混晶中Te施主能级[J]. 半导体学报(英文版), 1992, 13(6): 327-332.
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      • Received Date: 2015-08-19

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