J. Semicond. > Volume 36 > Issue 12 > Article Number: 125002

Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application

Junming Lin , , Guohao Zhang , Yaohua Zheng , Sizhen Li , Zhihao Zhang and Sidi Chen

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Abstract: A broadband class-F power amplifier for an S-band handset device is integrated on a 3×3×0.82 mm3 die using an InGaP/GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8-2.5 GHz. Tested with a continuous wave(CW) signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than-53 dBc across the second to fifth harmonic are obtained.

Key words: S-bandpower amplifierbroadbandclass-Fharmonic suppressionInGaP/GaAs HBT

Abstract: A broadband class-F power amplifier for an S-band handset device is integrated on a 3×3×0.82 mm3 die using an InGaP/GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8-2.5 GHz. Tested with a continuous wave(CW) signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than-53 dBc across the second to fifth harmonic are obtained.

Key words: S-bandpower amplifierbroadbandclass-Fharmonic suppressionInGaP/GaAs HBT



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Van der Bent G, de Hek P, van der Graaf M. 50 watt S-band power amplifier in 0.25 μm GaN technology[J]. 9th European Microwave Integrated Circuit Conference, 2014, 333.

[2]

Kawasaki S. The green energy harvesting winds by the RF/microwave power transmission[J]. WPTC, Key Note, 2013.

[3]

Kawasaki S, Yoshida S, Kobayashi Y. The S-band multi-stage amplifier for single-tone and time-division microwave communication and power transmission[J]. Asia-Pacific Microwave Conference Proceedings, 2013: 465.

[4]

Song J, Wang Z, Peng Y. A 2 GHz power amplifier realized in IBM SiGe BiCMOS technology 5P Ae[J]. Journal of Semiconductors, 2008, 29(11): 2101.

[5]

Mury T, Vincent F, Peter G. Power-combining class-E amplifier with finite choke[J]. IEEE Trans Circuits Syst, 2011, 58(3): 451.

[6]

Liao H Y, Chen J H, Chiou H K. Harmonic control network for 2.6 GHz CMOS class-F power amplifier[J]. IEEE International Symposium on Circuits and Systems, 2009, 1321.

[7]

Raghavan A, Deukhyoun H, Moonkyun M. A 2.4 GHz high efficiency SiGe HBT power amplifier with high-Q LTCC harmonic suppression filter[J]. IEEE MTT-S International Microwave Symposium Digest, 2002, 2: 1019.

[8]

Thian M, Vincent F F. Inverse class-E amplifier with transmission-line harmonic suppression[J]. IEEE Trans Circuits Syst, 2007, 54(7): 1555.

[9]

Negra R, Ghannouchi F M, Bachtold W. Study and design optimization of multiharmonic transmission-line load networks for class-E and class-F K-band MMIC power amplifiers[J]. IEEE Trans Microw Theory Tech, 2007, 55(6): 1390.

[10]

Cripps S C. RF power amplifier for wireless communications[J]. Artech House Publishers, 2006.

[11]

Kang D, Choi J, Jun M. Broadband class-F power amplifiers for handset applications[J]. IEEE European Microwave Conference, 2009: 1547.

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Hassan M, Larson L E, Leung V W. A combined series-parallel hybrid envelope amplifier for envelope tracking mobile terminal RF power amplifier applications[J]. IEEE J Solid-State Circuits, 2012, 47(5): 1185.

[13]

Moon J, Jee S, Kim J. Behaviors of class-F and class-F-1 amplifiers[J]. IEEE Trans Microw Theory Tech, 2012, 60(6): 1937.

[14]

Razavi B. RF microelectronics[J]. Pearson Education, 2012.

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J M Lin, G H Zhang, Y H Zheng, S Z Li, Z H Zhang, S D Chen. Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application[J]. J. Semicond., 2015, 36(12): 125002. doi: 10.1088/1674-4926/36/12/125002.

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History

Manuscript received: 26 March 2015 Manuscript revised: Online: Published: 01 December 2015

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