Chin. J. Semicond. > Volume 18 > Issue 1 > Article Number: 58

H处理对a-Si TFT矩阵性能的改善作用

赵颖 , 熊绍珍 , 孟志国 , 代永平 , 周祯华 , 姚伦 , 张建军 , 孙钟林 and 徐温元

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Abstract: 在PECVD系统制备a-SiTFT矩阵工艺中采用氢射频等离子辉光放电产生的H,钝化SiNx表面的硅悬键,从而使a-So:H/SiNx界面态得到减小.由此制备出的a-SiTFT矩阵,其性能得到明显改善.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1997

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