Chin. J. Semicond. > Volume 18 > Issue 1 > Article Number: 50

Si(100)上生长的CoSi_2薄膜的STM研究

梁励芬 , 董树忠 , 顾志光 and 李炳宗

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Abstract: 在大气中用STM研究了固相反应生长的CoSi2薄膜表面.在Si(100)晶片上用离子束溅射淀积Co/Ti双层膜,经退火处理完成三元固相反应,生成TiN/CoSi2/Si膜,然后经H2SO4和H2O2溶液腐蚀去除TiN膜层得到均匀平整的厚度约为100nm的CoSi2薄膜.AES,XRD等分析表明所得CoSi2膜层是Si(100)衬底的外延生长膜.STM测量结果显示CoSi2薄膜表面结构致密平整,主要由交替出现的平台和台阶结构组成.平台的平均宽度为9nm,台阶高度为2个原子层厚度,分析表明这是由于Si衬底的晶面切割偏离(100)面引起的.平台表面呈平行台阶方向的相距约1.1nm的条状结构.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1997

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