X R Luo, K Zhang, X Song, J Fang, F Yang, B Zhang, 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. J. Semicond., 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801.
Xiaorong Luo 1, , , Ke Zhang 1, , Xu Song 1, , Jian Fang 1, , Fei Yang 2, and Bo Zhang 1,
Abstract: A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF). The L-shaped P+ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (Cgd) and date–drain charge (Qgd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the VF and Qrr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Qgd and Cgd by 32% and 22%, respectively, in comparison with C-TMOS.
Key words: SiC, MOSFET, Schottky barrier diode, reverse recovery, gate-drain charge
Abstract: A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF). The L-shaped P+ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (Cgd) and date–drain charge (Qgd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the VF and Qrr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Qgd and Cgd by 32% and 22%, respectively, in comparison with C-TMOS.
Key words:
SiC, MOSFET, Schottky barrier diode, reverse recovery, gate-drain charge
References:
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Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49 |
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Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59 |
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Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347 |
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He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58 |
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Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803 |
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Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432 |
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Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248 |
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Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324 |
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Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599 |
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Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568 |
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Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605 |
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Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206 |
| [1] |
Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850 |
| [2] |
Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49 |
| [3] |
Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59 |
| [4] |
Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347 |
| [5] |
Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 |
| [6] |
He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58 |
| [7] |
Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803 |
| [8] |
Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432 |
| [9] |
Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248 |
| [10] |
Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125 |
| [11] |
Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324 |
| [12] |
Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017 |
| [13] |
Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005 |
| [14] |
Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1 |
| [15] |
Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599 |
| [16] |
Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568 |
| [17] |
Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605 |
| [18] |
Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206 |
X R Luo, K Zhang, X Song, J Fang, F Yang, B Zhang, 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. J. Semicond., 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801.
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Manuscript received: 13 December 2019 Manuscript revised: 08 January 2020 Online: Accepted Manuscript: 29 February 2020 Uncorrected proof: 12 March 2020 Published: 01 October 2020
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