J. Semicond. > Volume 41 > Issue 10 > Article Number: 102801

4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region

Xiaorong Luo 1, , , Ke Zhang 1, , Xu Song 1, , Jian Fang 1, , Fei Yang 2, and Bo Zhang 1,

+ Author Affiliations + Find other works by these authors

PDF

Turn off MathJax

Abstract: A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF). The L-shaped P+ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (Cgd) and date–drain charge (Qgd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the VF and Qrr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Qgd and Cgd by 32% and 22%, respectively, in comparison with C-TMOS.

Key words: SiCMOSFETSchottky barrier diodereverse recoverygate-drain charge

Abstract: A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF). The L-shaped P+ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (Cgd) and date–drain charge (Qgd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the VF and Qrr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Qgd and Cgd by 32% and 22%, respectively, in comparison with C-TMOS.

Key words: SiCMOSFETSchottky barrier diodereverse recoverygate-drain charge



References:

[1]

Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850

[2]

Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49

[3]

Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59

[4]

Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347

[5]

Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 $\bar 1$ 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 2017, 56(4S), 04CR08

[6]

He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58

[7]

Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803

[8]

Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432

[9]

Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248

[10]

Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125

[11]

Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324

[12]

Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017

[13]

Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005

[14]

Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1

[15]

Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599

[16]

Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568

[17]

Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605

[18]

Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206

[1]

Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850

[2]

Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49

[3]

Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59

[4]

Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347

[5]

Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 $\bar 1$ 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 2017, 56(4S), 04CR08

[6]

He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58

[7]

Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803

[8]

Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432

[9]

Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248

[10]

Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125

[11]

Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324

[12]

Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017

[13]

Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005

[14]

Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1

[15]

Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599

[16]

Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568

[17]

Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605

[18]

Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206

Search

Advanced Search >>

GET CITATION

X R Luo, K Zhang, X Song, J Fang, F Yang, B Zhang, 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. J. Semicond., 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801.

Export: BibTex EndNote

Article Metrics

Article views: 1503 Times PDF downloads: 53 Times Cited by: 0 Times

History

Manuscript received: 13 December 2019 Manuscript revised: 08 January 2020 Online: Accepted Manuscript: 29 February 2020 Uncorrected proof: 12 March 2020 Published: 01 October 2020

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误