Chin. J. Semicond. > Volume 10 > Issue 12 > Article Number: 885

InPδ掺杂的输运特性

程文超 , A.Zrenner , 叶秋怡 and F.Koch

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Abstract: 测量了用MOCVD技术制造的InP δ掺杂样品的磁输运特性,量子化Hall效应和高电场下的热电子效应.得到了该样品的载流子分布,子能带结构,杂质传播宽度和电子迁移率等基本物理参数,观察到填充因子v=2的量子Hall平台和负微分电阻现象,建立和证实了δ掺杂样品的热电子传输模型.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 December 1989

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