J. Semicond. > Volume 41 > Issue 10 > Article Number: 102401

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Elyes Garoudja 1, , , Walid Filali 1, , Slimane Oussalah 2, , Noureddine Sengouga 3, and Mohamed Henini 4,

+ Author Affiliations + Find other works by these authors

PDF

Turn off MathJax

Abstract: In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

Key words: barrier heightheuristic methodsmulti-quantum wellsparameters extractionSchottky diode

Abstract: In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.

Key words: barrier heightheuristic methodsmulti-quantum wellsparameters extractionSchottky diode



References:

[1]

Cheung S, Cheung N. Extraction of Schottky diode parameters from forward current–voltage characteristics. Appl Phys Lett, 1986, 49(2), 85

[2]

Werner J H. Schottky barrier and pn-junction I/V plots—Small signal evaluation. Appl Phys A, 1988, 47(3), 291

[3]

Karataş Ş, Altındal Ş. Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes. Solid-State Electron, 2005, 49(6), 1052

[4]

Dökme İ, Altindal Ş, Bülbül M M. The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer. Appl Surf Sci, 2006, 252(22), 7749

[5]

Karaboga N, Kockanat S, Dogan H. Parameter determination of the schottky barrier diode using by artificial bee colony algorithm. International Symposium on Innovations in Intelligent Systems and Applications, 2011, 6

[6]

Sellai A, Ouennoughi Z. Extraction of illuminated solar cell and Schottky diode parameters using a genetic algorithm. Int J Mod Phys C, 2005, 16(07), 1043

[7]

Werner J H, Güttler H H. Barrier inhomogeneities at Schottky contacts. J Appl Phys, 1991, 69(3), 1522

[8]

Norde H. A modified forward I–V plot for Schottky diodes with high series resistance. J Appl Phys, 1979, 50(7), 5052

[9]

Garoudja E, Kara K, Chouder A, et al. Parameters extraction of photovoltaic module for long-term prediction using artifical bee colony optimization. 3rd International Conference on Control, Engineering & Information Technology (CEIT), 2015, 1

[10]

Li F, Mudanai S P, Fan Y Y, et al. A simulated annealing approach for automatic extraction of device and material parameters of MOS with SiO2 high-K gate stacks. Proceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium (Cat. No. 03CH37488), 2003, 218

[11]

Wang K, Ye M. Parameter determination of Schottky-barrier diode model using differential evolution. Solid-State Electron, 2009, 53(2), 234

[12]

Kennedy J. Particle swarm optimization. Encyclopedia of Machine Learning, 2010, 760

[13]

Schroder D K. Semiconductor material and device characterization. John Wiley & Sons, 2006

[14]

Mathieu H, Fanet H. Physique des semiconducteurs et des composants électroniques. Dunod Paris, 2001 (in French)

[15]

Sze S M, Ng K K. Physics of semiconductor devices. John Wiley & Sons, 2006

[16]

Filali W, Sengouga N, Oussalah S, et al. Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes. Superlattices Microstruct, 2017, 111, 1010

[17]

Mari R. Electrical characterization of defects in III–V compound semiconductors by DLTS. PhD Thesis, University of Nottingham, 2011

[18]

Filali W, Oussalah S, Sengouga N, et al. Simulation of p-type Schottky diode based on Al0.29Ga0.71As with titanium/gold Schottky contact. 30th International Conference on Microelectronics (ICM), 2019, 272

[1]

Cheung S, Cheung N. Extraction of Schottky diode parameters from forward current–voltage characteristics. Appl Phys Lett, 1986, 49(2), 85

[2]

Werner J H. Schottky barrier and pn-junction I/V plots—Small signal evaluation. Appl Phys A, 1988, 47(3), 291

[3]

Karataş Ş, Altındal Ş. Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes. Solid-State Electron, 2005, 49(6), 1052

[4]

Dökme İ, Altindal Ş, Bülbül M M. The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer. Appl Surf Sci, 2006, 252(22), 7749

[5]

Karaboga N, Kockanat S, Dogan H. Parameter determination of the schottky barrier diode using by artificial bee colony algorithm. International Symposium on Innovations in Intelligent Systems and Applications, 2011, 6

[6]

Sellai A, Ouennoughi Z. Extraction of illuminated solar cell and Schottky diode parameters using a genetic algorithm. Int J Mod Phys C, 2005, 16(07), 1043

[7]

Werner J H, Güttler H H. Barrier inhomogeneities at Schottky contacts. J Appl Phys, 1991, 69(3), 1522

[8]

Norde H. A modified forward I–V plot for Schottky diodes with high series resistance. J Appl Phys, 1979, 50(7), 5052

[9]

Garoudja E, Kara K, Chouder A, et al. Parameters extraction of photovoltaic module for long-term prediction using artifical bee colony optimization. 3rd International Conference on Control, Engineering & Information Technology (CEIT), 2015, 1

[10]

Li F, Mudanai S P, Fan Y Y, et al. A simulated annealing approach for automatic extraction of device and material parameters of MOS with SiO2 high-K gate stacks. Proceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium (Cat. No. 03CH37488), 2003, 218

[11]

Wang K, Ye M. Parameter determination of Schottky-barrier diode model using differential evolution. Solid-State Electron, 2009, 53(2), 234

[12]

Kennedy J. Particle swarm optimization. Encyclopedia of Machine Learning, 2010, 760

[13]

Schroder D K. Semiconductor material and device characterization. John Wiley & Sons, 2006

[14]

Mathieu H, Fanet H. Physique des semiconducteurs et des composants électroniques. Dunod Paris, 2001 (in French)

[15]

Sze S M, Ng K K. Physics of semiconductor devices. John Wiley & Sons, 2006

[16]

Filali W, Sengouga N, Oussalah S, et al. Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes. Superlattices Microstruct, 2017, 111, 1010

[17]

Mari R. Electrical characterization of defects in III–V compound semiconductors by DLTS. PhD Thesis, University of Nottingham, 2011

[18]

Filali W, Oussalah S, Sengouga N, et al. Simulation of p-type Schottky diode based on Al0.29Ga0.71As with titanium/gold Schottky contact. 30th International Conference on Microelectronics (ICM), 2019, 272

Search

Advanced Search >>

GET CITATION

E Garoudja, W Filali, S Oussalah, N Sengouga, M Henini, Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters[J]. J. Semicond., 2020, 41(10): 102401. doi: 10.1088/1674-4926/41/10/102401.

Export: BibTex EndNote

Article Metrics

Article views: 1359 Times PDF downloads: 63 Times Cited by: 0 Times

History

Manuscript received: 28 November 2019 Manuscript revised: 04 February 2020 Online: Accepted Manuscript: 07 April 2020 Uncorrected proof: 24 April 2020 Published: 01 October 2020

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误