Chin. J. Semicond. > Volume 18 > Issue 6 > Article Number: 474

定向局部异质外延生长的p型金刚石膜压阻效应的研究

王万录 , 张振刚 , 廖克俊 , 吴彬 , 张世斌 and 廖梅勇

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Abstract: 本文研究了局部定向异质外延生长的金刚石膜的压阻效应,实验研究表明,这种膜的压阻因子在200微应变,室温下约为1300.其值大大超过了单晶硅的相应值,这是因为外延膜中缺陷态降低并且改进了测试方法,文中还简单讨论了金刚石膜压阻效应的起因.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1997

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