Chin. J. Semicond. > Volume 18 > Issue 7 > Article Number: 527

Al_(0.3)Ga_(0.7)As/GaAs HEMT结构参数优化提取

刘诺 , 谢孟贤 and 石迎春

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Abstract: 采用近年发展的两种电行控制模型及改进的两区v-E模型推导了“反向”器件模型,从直流I-V特性分析求解了Al0.3Ga0.7As/GaAsHEMT的结构参数.因非线性电行控制模型有效地反映了2DEG浓度ns随栅压的实际变化,所提取结构参数与文献报道基本相符.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1997

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