Chin. J. Semicond. > Volume 4 > Issue 2 > Article Number: 142

硅P-N结电场对金施主中心空穴热发射率的影响

陈开茅 and 毛晋昌

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 在115.2K到162.3K的温度范围内,用电容瞬态技术研究了P-N结电场对硅中金施主中心空穴热发射率的影响.测量结果表明电场对热发射率有很强的增强作用,这种作用强烈地依赖于温度.用电场降低极化势垒效应可以解释这种作用.极化势垒的形式为V(r)=-Ar~(-4),实验定出上述温度范围的A从8.8 × 10~(-27)变到1.1×10~(-27)eVcm~4.在测量方法方面,首次考虑了空间电荷区边界层对热发射率-电场关系测量结果的影响,提出了修正这种影响的具体方法.

Search

Advanced Search >>

Article Metrics

Article views: 1894 Times PDF downloads: 901 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1983

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误