Chin. J. Semicond. > Volume 11 > Issue 3 > Article Number: 215

衬底预非晶化对低能硼注入硅形成浅结的影响

卢志恒 , 李素杰 , 张朝明 , 罗晏 and 张荟星

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Abstract: 本文研究了不同剂量,不同能量硅自注入预非晶化对低能硼注入硅形成浅结的影响。对于10keV硼注入情形,只要含硼表面层是充分预非晶化的,都可得到结深为0.15μm左右的浅结。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1990

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