2019年JOS入选“中国科技期刊卓越行动计划”
2020年11月JOS被EI数据库收录
Chin. J. Semicond. > Volume 12 > Issue 10 > Article Number: 609
|

Si单晶的光学限制特性

田建国 , 张春平 and 张光寅

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 我们观察到了Si单晶对调 Q Nd:YAG的 1.06 μm脉冲激光的光学限制效应,并对其机理进行了分析.

Search

Advanced Search >>

Article Metrics

Article views: 1057 Times PDF downloads: 1100 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1991

Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误
Send