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Chin. J. Semicond. > Volume 12 > Issue 3 > Article Number: 150

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半导体量子阱材料的调制光谱研究

钱士雄 , 袁述 , 吴建耀 , 李郁芬 and T.G.Andersson

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Abstract: 我们采用光调制透射方法从In_xGa_(1-x)As/GaAs单量子阱样品测量了调制透射谱,得到了InGaAs量子阱中激子的清晰的调制结构.由电场调制原理对调制透射谱进行拟合,得到了激子的跃迁能量.结果与其他测量以及理论计算结果有较好的一致.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1991

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