Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 361

TiSi_2 Polycide LDD MOS工艺研究

徐秋霞,龚义元,张建欣,扈焕章,汪锁发,李卫宁

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Abstract: 本文着重研究了0.6μmTiSi2PolycideLDDNMOS器件工艺技术.用RIE刻蚀获得了0.6μm严格各向异性的精细结构2分析研究表明TEOSSiO2膜厚tf、多晶硅栅的剖面倾角θ是影响侧壁宽度W的重要因素,经优化后可控制W为0.30~0.32μm;在Al与Si之间引入一层TiN/Ti复合层作为Al-Si间的扩散势垒层,获得了良好的热稳定性.上述工艺技术已成功地应用于0.6μmTiSi2PolycideLDDE/DMOS31级环形振荡器的研制,其平均缴延迟为310Ps(0.29mW/级),工作电压

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

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