Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 354

键合Si/SiO_2/Si结构的C-V特征

黄庆安,陈军宁,张会珍,童勤义

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文研究了理想Si/SiO2/Si结构的电容-电压(C-V)特征,提出了根据Si/SiO2/Si的C-V特征测量SiO2厚度、衬底掺杂浓度和固定电荷的方法,并对键合样品进行了实验.

Search

Advanced Search >>

Article Metrics

Article views: 1421 Times PDF downloads: 1124 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误