Abstract: 本文研究了理想Si/SiO2/Si结构的电容-电压(C-V)特征,提出了根据Si/SiO2/Si的C-V特征测量SiO2厚度、衬底掺杂浓度和固定电荷的方法,并对键合样品进行了实验.
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Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994
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