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Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 354

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键合Si／SiO_2／Si结构的C－V特征

黄庆安，陈军宁，张会珍，童勤义

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Abstract: 本文研究了理想Ｓｉ／ＳｉＯ２／Ｓｉ结构的电容－电压（Ｃ－Ｖ）特征，提出了根据Ｓｉ／ＳｉＯ２／Ｓｉ的Ｃ－Ｖ特征测量ＳｉＯ２厚度、衬底掺杂浓度和固定电荷的方法，并对键合样品进行了实验．

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

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