Chin. J. Semicond. > Volume 3 > Issue 2 > Article Number: 141

InGaSn/Si接触电势差的测量

徐至中 and 梁励芬

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Abstract: <正> 采用InGaSn 合金探针可以方便地对MOS 电容进行测量.但是要精确地知道MOS电容氧化层中总的界面电荷,必须预先知道电极金属与硅之间的接触电势差.为此我们对 InGaSn/Si接触电势差进行了测量.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1982

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